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Effect of Via Etch Profile and Barrier Metal on Electromigration Performance of W-Filled Via Structure in TiN/AlCu/TiN Metallization

Published online by Cambridge University Press:  15 February 2011

Larry M. Ting ,
G. Dixit ,
M. Jain ,
K. A. Littau ,
H. Tran ,
M. Chang  and
A. Sdsfha
Larry M. Ting
Affiliation:
Texas Instruments, Dallas, TX
G. Dixit
Affiliation:
Texas Instruments, Dallas, TX
M. Jain
Affiliation:
Texas Instruments, Dallas, TX
K. A. Littau
Affiliation:
Applied Materials, Santa Clara, CA
H. Tran
Affiliation:
Applied Materials, Santa Clara, CA
M. Chang
Affiliation:
Applied Materials, Santa Clara, CA
A. Sdsfha
Affiliation:
Applied Materials, Santa Clara, CA
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Abstract

In this study, we have evaluated electromigration performance of W-plug vias, fabricated with process variations in via hole etching as well as in via barrier deposition, on a TiN(barrier)/AlCu/TiN metallization system. We found that via etch profile scheme as well as deposition conformity for via barrier can significantly affect W-plug via lifetimes. The results indicate that the quality of contact with AlCu layer of bottom level metal is a critical factor in determining via lifetime. Precise control of via etching or by use of conformal via barrier to ensure a good barrier between W-plug and the AlCu of bottom level metal is essential for achieving reliable via structures.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 391: Symposium T – Materials Reliability in Microelectronics V , 1995 , 453
Copyright
Copyright © Materials Research Society 1995

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