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Effect of the MOS Process on the Work-Function Difference Between the Polysilicon Gates and the Silicon Substrate

Published online by Cambridge University Press:  21 February 2011

N. Lifshitz
N. Lifshitz*
Affiliation:
AT&T Bell Laboratories Murray Hill. New Jersey 07974
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Abstract

Polysilicon gates are an important element of modem MOS integrated circuit technology. The workfunction difference (ϕps) between the polysilicon gate and the silicon substrate is a vital parameter of the MOS system because it determines the threshold voltage of the field-effect transistor. Ideally, ϕps is determined by the doping level in both polysilicon and the substrate. In reality process variations influence the ϕPS in a tangible way. Some of these effects are reviewed in the present paper.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 182: Symposium C – Polysilicon Thin Films and Interfaces , 1990 , 305
Copyright
Copyright © Materials Research Society 1990

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References

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