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Effect of the Bottom Electrode Contact (BEC) on the phase transformation of N2 doped Ge2Sb2Te 5 (N-GST) in a Phase-change Random Access Memory

Published online by Cambridge University Press:  01 February 2011

Suyoun Lee ,
Y. J. Song ,
Y. N. Hwang ,
S. H. Lee ,
J. H. Park ,
K. C. Ryoo ,
S. J. Ahn ,
C. W. Jeong ,
J. H. Oh  and
J. M. Shin
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Suyoun Lee
Affiliation:
Advanced Technology Development Team, Samsung Electronics, Yongin-City, South Korea
Y. J. Song
Affiliation:
Advanced Technology Development Team, Samsung Electronics, Yongin-City, South Korea
Y. N. Hwang
Affiliation:
Advanced Technology Development Team, Samsung Electronics, Yongin-City, South Korea
S. H. Lee
Affiliation:
Advanced Technology Development Team, Samsung Electronics, Yongin-City, South Korea
J. H. Park
Affiliation:
Advanced Technology Development Team, Samsung Electronics, Yongin-City, South Korea
K. C. Ryoo
Affiliation:
Advanced Technology Development Team, Samsung Electronics, Yongin-City, South Korea
S. J. Ahn
Affiliation:
Advanced Technology Development Team, Samsung Electronics, Yongin-City, South Korea
C. W. Jeong
Affiliation:
Advanced Technology Development Team, Samsung Electronics, Yongin-City, South Korea
J. H. Oh
Affiliation:
Advanced Technology Development Team, Samsung Electronics, Yongin-City, South Korea
J. M. Shin
Affiliation:
Advanced Technology Development Team, Samsung Electronics, Yongin-City, South Korea
F. Yeung
Affiliation:
Advanced Technology Development Team, Samsung Electronics, Yongin-City, South Korea
W. C. Jeong
Affiliation:
Advanced Technology Development Team, Samsung Electronics, Yongin-City, South Korea
Y. T. Kim
Affiliation:
CAE Team, Samsung Electronics Co., Ltd, Yongin-City, South Korea
J. B. Park
Affiliation:
AE Lab, Samsung Advanced Institute of Technology, Yongin-City, South Korea.
K. H. Koh
Affiliation:
Advanced Technology Development Team, Samsung Electronics, Yongin-City, South Korea
G. T. Jeong
Affiliation:
Advanced Technology Development Team, Samsung Electronics, Yongin-City, South Korea
H. S. Jeong
Affiliation:
Advanced Technology Development Team, Samsung Electronics, Yongin-City, South Korea
Kinam Kim
Affiliation:
Advanced Technology Development Team, Samsung Electronics, Yongin-City, South Korea
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Extract

With respect to the operation of a Phase-change Random Access Memory (PRAM or PcRAM), we studied the effect of the contact between the electrode metal and the chalcogenide glass, N2 doped Ge2Sb2Te5 in this report. We investigated a change of the resistance-programming current pulse (R-I) curve varying the contact size and the electrode material. Also we tested the surface oxidation of the electrode. We found that the programming current, the resistance of the programmed state (“RESET”) and the erased state (“SET”) were highly dependent on the above parameters. These results are presented and a more effective way to the high density PRAM will be proposed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 830: Symposium D – Materials and Processes for Nonvolatile Memories , 2004 , D7.9
Copyright
Copyright © Materials Research Society 2005

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References

REFERENCES

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