Hostname: page-component-586b7cd67f-vdxz6 Total loading time: 0 Render date: 2024-11-25T15:35:13.787Z Has data issue: false hasContentIssue false

The Effect of Substrate on the Microstructure and Mechanical Behavior of Eutectic Indium-Tin

Published online by Cambridge University Press:  15 February 2011

J. L. Freer Goldstein
Affiliation:
Center for Advanced Materials, Lawrence Berkeley Laboratory and Department of Materials Science and Mineral Engineering, University of California, Berkeley, CA 94720
J. W. Morris Jr.
Affiliation:
Center for Advanced Materials, Lawrence Berkeley Laboratory and Department of Materials Science and Mineral Engineering, University of California, Berkeley, CA 94720
Get access

Abstract

This study was conducted in order to determine and understand the effect of substrate on eutectic In-Sn. Samples for mechanical testing were produced with either bare Cu or Ni on Cu substrates. Both the microstructure and the mechanical behavior are strongly dependent on substrate, with In-Sn on Cu having a non-uniform and irregular microstructure and In-Sn on Ni having a uniform, normal colony-based eutectic. Deformation is more uniform in the In-Sn on Ni, while it is concentrated along the length of the joint in the In-Sn on Cu. This is reflected in the different shapes of stress-strain curves between In-Sn on Cu and In-Sn on Ni. The stress exponents and activation energies for creep also vary with substrate. Creep deformation is governed by the In-rich γ phase for In-Sn on Cu and by the Sn-rich y phase for In-Sn on Ni. If In-Sn on Ni samples are aged, the microstructure coarsens and the mechanical behavior changes to resemble that of the as-cast In-Sn on Cu.

Type
Research Article
Copyright
Copyright © Materials Research Society 1994

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1 White, C. E. T. and Evans, G. P., Research and Development, 28, 88 (1986).Google Scholar
2 Chen, Fuh-Kuo, Ph.D. Dissertation, University of California, Berkeley, 1989.Google Scholar
3 Freer, J. L. and Morris, J. W. Jr., J. Electon. Mater., 21, 647 (1992).CrossRefGoogle Scholar
4 Goldstein, J. L. Freer and Morris, J. W. Jr., submitted to Metall. Trans., Sept. 1993.Google Scholar
5 Goldstein, J. L.Freer, Ph.D. Dissertation, University of California, Berkeley, 1993.Google Scholar
6 Mohamed, F. A., Murty, K. L. and Morris, J. W. Jr., Metall. Trans, 4, 935 (1973).CrossRefGoogle Scholar
7 Darveaux, R., Yung, E., Turlik, I., and Murty, K. L., in Electronic Packaging Materials Science V, edited by Lillie, E. D., et al. (Mater. Res. Soc, Proc. 203, Pittsburgh, PA, 1991) pp. 443448.Google Scholar
8 Eckert, R. E. and Drickamer, H. J., J. Chem. Phys., 20, 13 (1952).CrossRefGoogle Scholar
9 Meakin, J. D. and Klokholn, E., Trans. Met. Soc. AIME, 218, 463 (1960).Google Scholar
10 Coston, C. and Nachtreib, N. H., J. Phys. Chem., 68, 2219 (1964).CrossRefGoogle Scholar