Hostname: page-component-cd9895bd7-mkpzs Total loading time: 0 Render date: 2024-12-27T02:33:27.883Z Has data issue: false hasContentIssue false
  • English
  • Français

Effect of Si and Er Co-doping on Green Electroluminescence from GaN:Er ELDs

Published online by Cambridge University Press:  01 February 2011

Rui Wang  and
Andrew J Steckl
Rui Wang
Affiliation:
[email protected], University of Cincinnati, Electrical & Computer Engineering, 910 Rhodes Hall, Cincinnati, OH, 45221, United States, 5135564829, 5135561549
Andrew J Steckl
Affiliation:
[email protected], University of Cincinnati, Department of Electrical & Computer Engineering, Cincinnati, OH, 45221-0030, United States
Get access

Abstract

(Er, Si) co-doped GaN thin films were grown on Si substrates by molecular beam epitaxy (MBE) technique. Electroluminescent devices (ELDs) were fabricated and the effect of Si co-doping on the performance of GaN devices was studied. Previous results with GaN:Er ELDs reported that electroluminescence (EL) was much stronger in reverse bias than in forward bias condition, indicating that the dominant factor in EL intensity was the electric field. The results reported here show the first time GaN:Er ELDs where forward bias EL is very much larger, indicating that the dominant factor is forward bias current. The electrical properties of (Si, Er) co-doped GaN thin films are believed to be responsible for the current control mechanism.

Keywords

Erluminescencemolecular beam epitaxy (MBE)
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1068: Symposium C – Advances in GaN, GaAs, SiC and Related Alloys on Silicon Substrates , 2008 , 1068-C05-03
Copyright
Copyright © Materials Research Society 2008

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

[1] Favennec, P. N. H. L'Haridon, Salvi, M. Moutonnet, D. and Guillou, Y. Le, “Luminescence of erbium implanted in various semiconductors: IV, III-V and II-VI materials,” Elec. Lett., vol. 25, p. 718, 1989.Google Scholar
[2] Steckl, A. J. Park, J. H. and Zavada, J. M. “Prospects for rare earth doped GaN lasers on Si,” Materials Today, vol. 10, pp. 20–27, 2007.Google Scholar
[3] Steckl, A. J. Garter, M. Birkhahn, R. and Scofield, J. “Green electroluminescence from Er-doped GaN Schottky barrier diodes,” Appl. Phys. Lett., vol. 73, pp. 2450–2452, 1998.Google Scholar
[4] Garter, M. J. and Steckl, A. J. “Temperature behavior of visible and infrared electroluminescent devices fabricated on erbium-doped GaN,” IEEE Trans. on electron devices, vol. 49, pp. 48–54, 2002.Google Scholar
[5] Zavada, J. M. Jin, S. X. Nepal, N. Lin, J. Y. Jiang, H. X. Chow, P. and Hertog, B. “Electroluminescent properties of erbium-doped III-V light-emitting diodes,” Appl. Phys. Lett., vol. 84, pp. 1061–1063, 2004.Google Scholar
[6] Jenkins, D. W. and Dow, J. D. “Electronic structures and doping of Inx, InxGa1-xN, and InxAl1-xN,” Phys. Rev. B vol. 39, pp. 3317–3329, 1989.Google Scholar
[7] Steckl, A. J. Heikenfeld, J. Gartner, M. Birkhahn, R. and Lee, D. S. “Rare Earth Doped Gallium Nitride – Light Emission from Ultraviolet to Infrared,” Compound Semiconductor, vol. 6, pp. 48–52, 2000.Google Scholar