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Effect of Ni and Al on the Low-Temperature Field Aided Lateral Crystallization (FALC)

Published online by Cambridge University Press:  10 February 2011

Sang-Hyun Park ,
Seung-Ik Jun ,
Chan-Jae Lee ,
Yong-Ho Yang  and
Duck-Kyun Choi
Sang-Hyun Park
Affiliation:
Dept. of Inorganic Materials Engineering, CPRC (Ceramic Processing Research Center), Hanyang University, 17 Haengdang-dong Seongdong-ku Seoul 133-791, Korea, [email protected]
Seung-Ik Jun
Affiliation:
Dept. of Inorganic Materials Engineering, CPRC (Ceramic Processing Research Center), Hanyang University, 17 Haengdang-dong Seongdong-ku Seoul 133-791, Korea, [email protected]
Chan-Jae Lee
Affiliation:
Dept. of Inorganic Materials Engineering, CPRC (Ceramic Processing Research Center), Hanyang University, 17 Haengdang-dong Seongdong-ku Seoul 133-791, Korea, [email protected]
Yong-Ho Yang
Affiliation:
Dept. of Inorganic Materials Engineering, CPRC (Ceramic Processing Research Center), Hanyang University, 17 Haengdang-dong Seongdong-ku Seoul 133-791, Korea, [email protected]
Duck-Kyun Choi
Affiliation:
Dept. of Inorganic Materials Engineering, CPRC (Ceramic Processing Research Center), Hanyang University, 17 Haengdang-dong Seongdong-ku Seoul 133-791, Korea, [email protected]
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Abstract

There have been many reports on the low temperature crystallization of amorphous silicon films by introducing a trace amount of metal impurity for low temperature poly-Si TFTs applications. MIC (Metal Induced Crystallization) uses various metals, to lower crystallization temperature. In this study, a new crystallization method called FALC (Field Aided Lateral Crystallization) in which an electric field is applied during the crystallization was explored. Among possible alloying elements with Si, Ni and Al were selected to compare the effects of these impurities on the FALC.

A trace of Ni lowered the crystallization temperature of a-Si down to 5001C and induced lateral crystal growth along the electric field into the metal free region. But Al exhibited no such effect. A new crystallization method, FALC, showed considerably enhanced speed of lateral crystallization and a strong preferred orientation in crystallized Si-films.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 508: Symposium B – Flat Panel Display Materials - 1998 , January 1998 , 161
Copyright
Copyright © Materials Research Society 1998

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References

[1] Yeh, Ching-Fa. and Chern, Chyi-Hsiang., Japanese J. Appl. Phys. 33 643 (1994)Google Scholar
[2] Kawazu, Yunosuke, Kudo, Hiroshi, Onari, Seinosuke and Japanese, Toshihiro J. Appl. Phys. 29 2698 (1990)Google Scholar
[3] Hung, L. S. and Mayer, J. W., Thin Solid Films, 109 85 (1983)Google Scholar
[4] Hayzelden, C. and Batstone, J. L., J. Appl. Phys. 73 8279 (1993)Google Scholar
[5] Lee, Seok-Woon, Jeon, Yoo-Chan, and Joo, Seung-Ki, Appl. Phys. Lett. 66 1671 (1995)Google Scholar
[6] Radnoczi, G., Robertsson, A., Henzell, H. T. G., Gong, S. F., and Hasan, M.-A., J. Appl. Phys. 69 6394 (1991)Google Scholar
[7] Wolf, S. and Tauber, R.N., Silicon Processing for the VLSI Era, Vol. 1. (Lattice Press, Sunset Beach, California, (1986)), p. 591 Google Scholar
[8] Harbeke, G. and Jastrzebski, L., J. Electrochem. Soc. 137 696 (1990)Google Scholar
[9] Carlsson, J. R. A., Sundgren, J.-E., Li, X.-H., Madsen, L. D., and Hentzell, H. T. G., J. Appl. Phys. 81 1150 (1997)Google Scholar