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Effect of Ion-implantation on Forming and Resistive Switching Response of NiO Thin-Films

Published online by Cambridge University Press:  01 February 2011

Robert Elliman ,
Muhammad Saleh ,
Sung Kim ,
Dinesh Venkatachalam ,
Taehyun Kim  and
Kidane Belay
Robert Elliman
Affiliation:
[email protected], The Australian National University, Electronic Materials Engineering, Canberra, Australian Capital Territory, Australia
Muhammad Saleh
Affiliation:
[email protected], The Australian National University, Electronic Materials Engineering, Canberra, Australian Capital Territory, Australia
Sung Kim
Affiliation:
[email protected], The Australian National University, Electronic Materials Engineering, Canberra, Australian Capital Territory, Australia
Dinesh Venkatachalam
Affiliation:
[email protected], The Australian National University, Electronic Materials Engineering, Canberra, Australian Capital Territory, Australia
Taehyun Kim
Affiliation:
[email protected], The Australian National University, Electronic Materials Engineering, Canberra, Australian Capital Territory, Australia
Kidane Belay
Affiliation:
[email protected], The Australian National University, Electronic Materials Engineering, Canberra, Australian Capital Territory, Australia
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Abstract

The forming voltage and set/reset response of sputter-deposited NiO thin films is studied as a function of implant fluence for samples implanted with Ni and O ions. The forming voltage of the films is shown to decrease with increasing ion fluence and to scale with the damage production rate of the different ions. In contrast, the set/reset response of the films was largely unaffected by the ion-implantation. These results are discussed in terms of the filamentary model of conduction and the thermochemical model of resistive switching.

Keywords

ion-implantationmemoryinsulator
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1250: Symposium G – Materials and Physics for Nonvolatile Memories II , 2010 , 1250-G05-06
Copyright
Copyright © Materials Research Society 2010

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