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Effect of Hydrogen Dilution on Structure and Electronic Properties of Ge:H and GeYSi1-Y Films Deposited by Low Frequency Plasma

Published online by Cambridge University Press:  01 February 2011

Andrey Kosarev ,
L. Sanchez ,
A. Torres ,
T. Felter ,
A. Ilinskii ,
Y. Kudrjavtsev  and
R. Asomoza
Andrey Kosarev
Affiliation:
[email protected], INAOE, Electronics, Luis Enrique Erro No.1, Sta. Maria tonanzintla, Puebla, 72000, Mexico, 52 222 2663 100 Ext. 1409
L. Sanchez
Affiliation:
[email protected], National Institute for Astrophysics, Optics ans Electronics, Puebla, 72000, Mexico
A. Torres
Affiliation:
[email protected], National Institute for Astrophysics, Optics ans Electronics, Puebla, 72000, Mexico
T. Felter
Affiliation:
[email protected], Lawrence Livermore National Laboratory, CA, 94550, United States
A. Ilinskii
Affiliation:
[email protected], Benemerita Universidad Autonoma de Puebla, Puebla, N/A, 72050, Mexico
Y. Kudrjavtsev
Affiliation:
[email protected], CINVESTAV-IPN, D.F, N/A, 07360, Mexico
R. Asomoza
Affiliation:
[email protected], CINVESTAV-IPN, D.F, N/A, 07360, Mexico
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Abstract

We report on a systematical study of growth rate, surface morphology, hydrogen and oxygen incorporation, optical and electrical properties in Ge:H and GeYSi1-Y:H, Y> 0.85 films, deposited in a capacitive reactor by low frequency PE CVD. Silane and germane were used as feed gases diluted by hydrogen. Hydrogen dilution characterized by R= QH2/[QSiH4+QGeH4], where QH2, QSiH4, and QGeH4 are gas flows of hydrogen, silane and germane, respectively. The flow was varied in the range of R=20 to 80. Composition of the films was characterized by SIMS profiling. We did not observed a significant change of the deposition rate Vd in GeYSi1-Y:H films in all the range of R, while for Ge:H films Vd was significantly reduced after R=50. AFM characterization of the surface morphology demonstrated that at R=50 average height <H>(R) reached maximum in both Ge:H and GeYSi1-Y:H films, while average diameter <D>(R) had a minimum in GeYSi1-Y:H films and maximum in Ge:H films. Both Ge:H and GeYSi1-Y:H films demonstrated change of E04 in the studied range of R, and a minimum clearly appeared in E at R=50-60 suggesting significant reduction in weak bonds of these films. The activation energy of conductivity Ea slightly increases with R in Ge:H films and shows no definitive trend in GeYSi1-Y:H: films. Both FTIR and SIMS data show a general trend of reducing hydrogen and oxygen content with R. These two types of films showed different behavior and correlations between surface morphology and optical and electrical properties.

Keywords

Gestructuralplasma-enhanced CVD (PECVD) (deposition)
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 910: Symposium A – Amorphous and Polycrystalline Thin-Film Silicon Science and Technology – 2006 , 2006 , 0910-A07-02
Copyright
Copyright © Materials Research Society 2006

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