Hostname: page-component-cd9895bd7-hc48f Total loading time: 0 Render date: 2024-12-27T02:01:24.853Z Has data issue: false hasContentIssue false
  • English
  • Français

Effect of Graded AlxGa1-xN Interlayer Buffer on the Strain of GaN Grown on Si (111) Using MOCVD Method

Published online by Cambridge University Press:  01 February 2011

KungLiang Lin ,
Edward-Yi Chang ,
Tingkai Li ,
Wei-Ching Huang ,
Yu-Lin Hsiao ,
Douglas Tweet ,
Jer-shen Maa  and
Sheng-Teng Hsu
KungLiang Lin
Affiliation:
[email protected], National Chiao Tung University, Department of Materials Science and Engineering, R407 MIRC ,1001 University Road, Hsinchu, 300, Taiwan, +886-3-5712121-52999, +886-3-5745497
Edward-Yi Chang
Affiliation:
[email protected], National Chiao Tung University, Department of Materials Science and Engineering, 1001 University Road, Hsinchu, 300, Taiwan
Tingkai Li
Affiliation:
[email protected], Sharp Laboratories of America, Inc., Camas, WA, 5700, United States
Wei-Ching Huang
Affiliation:
[email protected], National Chiao Tung University, Department of Materials Science and Engineering, 1001 University Road, Hsinchu, 300, Taiwan
Yu-Lin Hsiao
Affiliation:
[email protected], National Chiao Tung University, Department of Materials Science and Engineering, 1001 University Road, Hsinchu, 300, Taiwan
Douglas Tweet
Affiliation:
[email protected], Sharp Laboratories of America, Inc., Camas, WA, 5700, United States
Jer-shen Maa
Affiliation:
[email protected], Sharp Laboratories of America, Inc., Camas, WA, 5700, United States
Sheng-Teng Hsu
Affiliation:
[email protected], Sharp Laboratories of America, Inc., Camas, WA, 5700, United States
Get access

Abstract

GaN film grown on Si substrate with AlN/AlxGa1−xN buffer is studied by low pressure metal organic chemical vapor deposition (MOCVD) method. The AlxGa1−xN film with Al composition varying from 0∼ 0.66 was used. The correlation of the Al composition in the AlxGa1−xN film with the stress of the GaN film grown was studied using high resolution X-ray diffraction including symmetrical and asymmetrical ω/2θscans and reciprocal space maps. It is found that with proper design of the Al composition in the AlxGa1−xN buffer layer, crack-free GaN films can be successfully grown on Si (111) substrates using AlN and AlxGa1−xN buffer layers.

Keywords

III-Vchemical vapor deposition (CVD) (deposition)x-ray diffraction (XRD)
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1068: Symposium C – Advances in GaN, GaAs, SiC and Related Alloys on Silicon Substrates , 2008 , 1068-C03-07
Copyright
Copyright © Materials Research Society 2008

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Takeuchi, T. Amano, H. Hiramatsu, K. Sawaki, N. and Akasaki, I. J. Cryst. Growth 115, 634 (1991).Google Scholar
2. Strittmatter, A. Krost, A. Straβburg, M., Türck, V., Bimberg, D. Bläsing, J., and Christen, J. Appl. Phys. Lett. 74, 1242 (1999).Google Scholar
3. Nakada, Y. Aksenov, I. and Okumura, H. Appl. Phys. Lett. 73, 827 (1998).Google Scholar
4. Guha, S. and Bojarczuk, N. A. Appl. Phys. Lett. 73, 1487 (1998).Google Scholar
5. Tran, C. A. Osinski, A. Karlicek, R. F. Jr., and Berishev, I. Appl. Phys.Lett. 75, 1494 (1999).Google Scholar
6. Yang, J. W. Lunev, A. Simin, G. Chitnis, A. Shatalov, M. Khan, M. Asif, Nostrand, J. E. Van, and Gaska, R. Appl. Phys. Lett. 76, 273 (2000).Google Scholar
7. Zamir, S. Meyler, B. and Salzman, J. Appl. Phys. Lett. 78, 288 (2001).Google Scholar
8. Dadgar, A. Bläsing, J., Alam, A. Heuken, M. Krost, A. Jpn. J. Appl. Phys. 39 (2002) L1183 Google Scholar
9. Etzkorn, E. V. and Clarke, D. R. J. Appl. Phys. 89, 1025 (2001)Google Scholar
10. Lin, Kung-Liang, Chang, Edward-Yi, Hsiao, Yu-Lin, Huang, Wei-Ching, Li, Tingkai, Tweet, Doug, Maa, Jer-shen, , Sheng-Teng Lee, Hsu Ching-Ting, Appl. Phys. Lett. 91, 222111(2007)Google Scholar
11. Slack, G.A.; Bartram, S.F. J. Appl. Phys., v. 46, p. 89, 1975.Google Scholar
12. Tripathy, S., Chua, S.J., Chen, P., and Miao, Z.L., J. Appl. Phys. 92 (2002) 3503.Google Scholar
13. Guha, F.Shahedipour, Keller, R. C., Yang, V. and Wessels, B. W. Appl. Phys. Lett. 78, 58 (2001)Google Scholar
14. Koh, K. Park, Y. J. Kim, E. K. Park, C. S. Lee, S. H. Lee, J. H. and Choh, S. H. J. Cryst. Growth 218, 214 (2000).Google Scholar
15. Wang, L. S. Zang, K. Y. Tripathy, S. and Chua, S. J.. Appl. Phys. Lett. 85, 5881 (2004).Google Scholar
16. Jamil, M. Grandusky, J. R. Jindal, V. Shahedipour-Sandvik, F., Guha, S. and Arif, M.. Appl. Phys. Lett. 87, 082103 (2005).Google Scholar