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The Effect of Ge Content in MBE Si(1-x) Ge(x) on the Evolution of {311} Defects

Published online by Cambridge University Press:  01 February 2011

Robert Crosby ,
Jackie Frazer ,
K. S. Jones ,
Dr. M. E. Law ,
A. Nylandsted Larsen  and
J. Lundsgaard Hansen
Robert Crosby
Affiliation:
University of Florida, SWAMP Group Gainesville, Fl.
Jackie Frazer
Affiliation:
University of Florida, SWAMP Group Gainesville, Fl.
K. S. Jones
Affiliation:
University of Florida, SWAMP Group Gainesville, Fl.
Dr. M. E. Law
Affiliation:
University of Florida, SWAMP Group Gainesville, Fl.
A. Nylandsted Larsen
Affiliation:
Institute of Physics and Astronomy, University of Aarhus, DK-8000, Aarhus, Denmark
J. Lundsgaard Hansen
Affiliation:
Institute of Physics and Astronomy, University of Aarhus, DK-8000, Aarhus, Denmark
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Abstract

Molecular beam epitaxial Si1-xGex layers of various Ge concentrations ranging from 0% to 50% were grown on top of a Si substrate. The wafers were then implanted with a 40 keV, 1 x 1014cm-2 Si+. To study the development of {311} defects, the samples were annealed at 750°C for times ranging from 0 to 20 minutes. TEM was utilized to observe both the formation and dissolution of the defects. The Si1-xGex samples with ≤ 5% Ge exhibit {311} defect formation and dissolution; however, samples with the Ge content lying between 15% and 50% showed only dislocation loop formation. It is suggested that the decrease in bond strength with increasing Ge content is the reason for the lack of {311} defect formation.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 717: Symposium C – Si Front-End Junction Formation Technologies , 2002 , C1.6
Copyright
Copyright © Materials Research Society 2002

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