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Effect of Electric ARC Plasma Jet Treatment on Mos Structure Reliability

Published online by Cambridge University Press:  15 February 2011

V. M. Maslovsky  and
G. Ya. Pavlov
V. M. Maslovsky
Affiliation:
Zelenograd Research Institute of Physical Problems, 103460 Moscow, Russia
G. Ya. Pavlov
Affiliation:
Centre for Analysis of Substances, 9, Elektrodnaya st., 111524 Moscow, Russia
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Abstract

The effect of electric arc plasma jet treatment (APJT) on MOS structure reliability has been investigated. Si/SiO2/Si*/Al structures have been studied using the technique of constant current charge to breakdown before and after APJT. The study showed that APJT can improve MOS structure reliability: constant current charge to breakdown Qbd increased to more than 5 C·cm-2 and breakdown field Ebd increased to more than 20 MV/cm. This result was attributed to a structural modification of SiO2 and its interfaces as a result of APJT. Evidence for these structural changes is the appearance of additional SiO2 IR absorption peak which was observed by us.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 391: Symposium T – Materials Reliability in Microelectronics V , 1995 , 139
Copyright
Copyright © Materials Research Society 1995

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References

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