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Dopant Enhanced Low-Temperature Epitaxial Growth by Rapid Thermal Processing Chemical Vapor Deposition

Published online by Cambridge University Press:  22 February 2011

T. Y. Hsieh ,
K. H. Jung  and
D. L. Kwong
T. Y. Hsieh
Affiliation:
Microelectronics Research Center, Department of Electrical and Computer Engineering, The University of Texas at Austin, Austin, TX 78712
K. H. Jung
Affiliation:
Microelectronics Research Center, Department of Electrical and Computer Engineering, The University of Texas at Austin, Austin, TX 78712
D. L. Kwong
Affiliation:
Microelectronics Research Center, Department of Electrical and Computer Engineering, The University of Texas at Austin, Austin, TX 78712
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Abstract

We have demonstrated, for the first time, that the epitaxial growth temperature can be lowered by dopant incorporation using rapid thermal processing chemical vapor deposition (RTPCVD). Heavily arsenic-doped epitaxial layers with very abrupt dopant transition profiles and relative uniform carrier distribution have been achieved at 800°C. The defect formation is closely related to dopant concentration; the defect density as a function of carrier concentration shows a sharp transition at about 3×1018 cm−3.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 220: Symposium B – Silicon Molecular Beam Epitaxy , 1991 , 625
Copyright
Copyright © Materials Research Society 1991

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References

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