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Diffusion of Phosphorus in Strained Si/SiGe/Si Heterostructures

Published online by Cambridge University Press:  10 February 2011

A. Yu. Kuznetsov ,
J. S. Christensen ,
M. K. Linnarsson ,
B. G. Svensson ,
H. H. Radamson ,
J. Grahn  and
G. Landgren
A. Yu. Kuznetsov
Affiliation:
Royal Institute of Technology (KTH), Solid State Electronics, Electrum 229, S 164 40 Kista-Stockholm, Sweden; [email protected]
J. S. Christensen
Affiliation:
Royal Institute of Technology (KTH), Solid State Electronics, Electrum 229, S 164 40 Kista-Stockholm, Sweden
M. K. Linnarsson
Affiliation:
Royal Institute of Technology (KTH), Solid State Electronics, Electrum 229, S 164 40 Kista-Stockholm, Sweden
B. G. Svensson
Affiliation:
Royal Institute of Technology (KTH), Solid State Electronics, Electrum 229, S 164 40 Kista-Stockholm, Sweden
H. H. Radamson
Affiliation:
Royal Institute of Technology (KTH), Semiconductor Laboratory, Electrum 229, S 164 40 Kista-Stockholm, Sweden
J. Grahn
Affiliation:
Royal Institute of Technology (KTH), Semiconductor Laboratory, Electrum 229, S 164 40 Kista-Stockholm, Sweden
G. Landgren
Affiliation:
Royal Institute of Technology (KTH), Semiconductor Laboratory, Electrum 229, S 164 40 Kista-Stockholm, Sweden
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Abstract

Phosphorus diffusion in a biaxially compressed Si0.87Ge0.13 film has been investigated in the temperature range of 810–900°C. A significant enhancement of the P diffusion in the biaxially compressed Si0.87Ge0.13 in comparison with P diffusion in Si is observed. Injection of Si self-interstitials (I) during oxidation of a Si-cap in Si/Si0.87Ge0.13/Si heterostructures is used to characterize the atomic mechanism of P diffusion in Si0.87Ge0.13. It is found that the upper limit of the interstitial fraction of the P diffusion in Si0.87Ge0.13 is 0.87 of that in Si. A comparison between B and P diffusivities in SiGe supports the hypothesis of the pairing-controlled mechanism for the diffusion of B in SiGe.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 568: Symposium S – Silicon Front-End Processing-Physics & Technology of Dopant… , 1999 , 271
Copyright
Copyright © Materials Research Society 1999

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References

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