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Diffusion of Boron in Germanium and Si1-xGex (x>50%) alloys Suresh Uppal

Published online by Cambridge University Press:  01 February 2011

A.F.W. Willoughby ,
J.M. Bonar ,
N.E.B. Cowern ,
R.J.H. Morris  and
M. Bollani
A.F.W. Willoughby
Affiliation:
Materials Research Group, School of Engineering Sciences, University of Southampton, Southampton, SO17 1BJ, United Kingdom
J.M. Bonar
Affiliation:
Department of Electronics and Computer Science, University of Southampton, Southampton, SO17 1BJ, United Kingdom
N.E.B. Cowern
Affiliation:
Advanced Technology Institute, University of Surrey, Guildford, GU2 7XH, Surrey, United Kingdom
R.J.H. Morris
Affiliation:
Advanced Technology Institute, University of Surrey, Guildford, GU2 7XH, Surrey, United Kingdom
M. Bollani
Affiliation:
Physics Department, University of Warwick, Coventry, CV4 7AL, United Kingdom dINFM and L-NESS, via Anzani 52, 22100 Como, Italy
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Abstract

Boron diffusion in germanium and relaxed Si1-xGex alloys with Ge content x>50% is reported. Relaxed SiGe layers were grown by LEPECVD and boron was introduced using ion implantation. Samples were given equal thermal budgets using furnace annealing. Diffusivity values of boron have been extracted. The results confirm that diffusion of boron in germanium is indeed slower than that reported in literature. The diffusivity of boron was found to increase gradually for x>50% at 900°C but the increase is not substantial. We found that pairing model is not sufficient to explain boron diffusivity behavior in SiGe alloys over the entire range of germanium content. The results suggest that an interstitial mediation of boron diffusion in germanium should be considered.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 765: Symposium D – CMOS Front-End Materials and Process Technology , 2003 , D6.16
Copyright
Copyright © Materials Research Society 2003

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References

[1] Lee, M.L., Leitz, C.W., Cheng, Z., Pitera, A.J., Langdo, T., Currie, M.T., Taraschi, G., Fitzgerald, E.A., Appl. Phys. Lett., 79, 3344 (2001).Google Scholar
[2] Kuo, P., Hoyt, J.L., Gibbons, J.F., Turner, J.E., and Lefforge, D. in Strained Layer Epitaxy-Material, Processing, and Device Applications, edited by Fitzgerald, Eugene A., Hoyt, Judy, Cheng, Keh-Yung, and Bean, John, (Mater. Res. Soc. Symo. Proc. 395, Pittsburgh, PA, 1995) pp. 373–378.Google Scholar
[3] Uppal, Suresh, Willoughby, Arthur F. W., Bonar, Janet M., Evans, Alan G.R., Cowern, Nick E.B., Morris, Richard, and Dowsett, Mark G., Journal of Applied Physics, 90, 4293 (2001) and Physica B, 308-310, 525 (2001).Google Scholar
[4] Rosenblad, C., Kummer, M., Dommann, A., Müller, E., Gusso, M., Tapfer, L., and Käanel, H. von, Material Science and Engineering, B74, 113 (2000).Google Scholar
[5] Meer, W. and Pommerrenig, D., Z. Angew. Phys., 23, 369 (1967).Google Scholar
[6] Dunlap, W. C. Jr, Phys. Rev., 94, 1531 (1954).Google Scholar
[7] People, R., IEEE Journal of Quantum Electronics, 22, 1696 (1986).Google Scholar
[8] Zangenberg, N., Ph.D. Thesis, University of Aarhus, Denmark.Google Scholar
[9] Bonar, J.M., Willoughby, A.F.W., Dan, A.H., Mcgregor, B.M., Lerch, W., Loeffelmacher, D., Cooke, G.A., and Dowsett, M.G., J. Material Science: Materials in Electronics, 12, 219 (2001).Google Scholar
[10] Fang, Tilden T., Fang, Wingra T. C., Griffin, Peter B., and Plummer, James D., Appl. Phys. Lett., 68, 791 (1996).Google Scholar
[11] Frank, W., Gösele, U., Mehrer, H. and Seeger, A., in Diffusion in Crystalline Solids, edited by Murch, G.E. and Nowich, A.S. (Academic Press, London, 1984) pp. 63–142.Google Scholar
[12] Eguchi, S., Hoyt, J.L., Leitz, C.W., and Fitzgerald, E.A., Appl. Phys. Lett., 80, 1743 (2002).Google Scholar