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Device Quality of Hydrogen Plasma Cleaning for Silicon Molecular Beam Epitaxy

Published online by Cambridge University Press:  15 February 2011

W. Hansch ,
I. Eisele ,
H. Kibbel  and
U. KÖnig
W. Hansch
Affiliation:
Universität der Bundeswehr München, Fakultät Elektrotechnik, Institut für Physik D-85577 Neubiberg, Germany
I. Eisele
Affiliation:
Universität der Bundeswehr München, Fakultät Elektrotechnik, Institut für Physik D-85577 Neubiberg, Germany
H. Kibbel
Affiliation:
Universität der Bundeswehr München, Fakultät Elektrotechnik, Institut für Physik D-85577 Neubiberg, Germany
U. KÖnig
Affiliation:
Daimler-Benz Forschungszentrum, D-89081 Ulm, Germany
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Abstract

Different substrate cleaning procedures were used before fabrication of pin diodes by silicon molecular beam epitaxy (MBE). We investigated the quality of these diodes in order to demonstrate the superior quality of a low energy plasma cleaning in an ultra-high vacuum ( UHV). This plasma cleaning by hydrogen makes a wet-chemical cleaning or a high-temperature desorption step unnecessary. Moreover, the plasma-cleaned substrates are so strongly hydrogen passivated, that they can be transported through air and processed in another MBE chamber without any additional cleaning steps.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 386: Symposium O – Ultraclean Semiconductor Processing Technology and Surface , 1995 , 345
Copyright
Copyright © Materials Research Society 1995

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References

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