Hostname: page-component-7479d7b7d-qs9v7 Total loading time: 0 Render date: 2024-07-08T20:58:59.787Z Has data issue: false hasContentIssue false
  • English
  • Français

Development of Three-Terminal Photodiodes Based on a-Si:H with an Additional Buried TCO Electrode

Published online by Cambridge University Press:  25 May 2012

Krystian Watty ,
Andreas Bablich ,
Konstantin Seibel ,
Christian Merfort  and
Markus Boehm
Krystian Watty
Affiliation:
Institute for Microsystem Technologies, Siegen University, Hoelderlinstr. 3, 57076 Siegen, Germany
Andreas Bablich
Affiliation:
Institute for Microsystem Technologies, Siegen University, Hoelderlinstr. 3, 57076 Siegen, Germany
Konstantin Seibel
Affiliation:
Institute for Microsystem Technologies, Siegen University, Hoelderlinstr. 3, 57076 Siegen, Germany
Christian Merfort
Affiliation:
Institute for Microsystem Technologies, Siegen University, Hoelderlinstr. 3, 57076 Siegen, Germany
Markus Boehm
Affiliation:
Institute for Microsystem Technologies, Siegen University, Hoelderlinstr. 3, 57076 Siegen, Germany
Get access

Abstract

This work presents the development of three-terminal photodiodes which have their origin in bipolar pinipip-diode-structures [1,2]. The idea is to develop an unipolar diode and to contact a buried p-layer by an interior TCO-anode (transparent conductive oxide) instead of nip-stacking. The simulation of the optical material properties shows promising results. At first, both parts of the diode-structure were produced separately. The manufactured bottom (Cr/nip/TCO) and top (TCO/pip/TCO) parts were measured optically and electrically. These measurements are required to simulate the SR of the total-diode. Finally, a Cr/nip-a-Si:H/TCO/pip-a-Si:H/TCO multi-layer stack was deposited. The measured SR of the integrated diode validates the simulated data. The SR maximum shift amounts to 100nm, from 540nm by contacting the interior anode, to 640nm at the top anode. Furthermore, the curves are clearly split and do not enclose each other. The presented approach, with additional bandgap engineering, promises good prospects to improve color separation compared to currently existing detectors and should lead to a tunable multi-spectral photodiodes for high quality color recognition. Such a diode can be used in photonic devices, e.g. for safety and security applications.

Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 1426: Symposium A – Amorphous and Polycrystalline Thin-Film Silicon Science and Technology—2012 , 2012 , pp. 223 - 228
Copyright
Copyright © Materials Research Society 2012

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

Rieve, P., PhD. Thesis, University of Siegen, 2000.Google Scholar
Rieve, P., Giehl, J., Zhu, Q., Boehm, M., MRS Proceedings, 420:135, (1996).CrossRefGoogle Scholar
Bayer, B. E., US Patent 3971065 (1976).Google Scholar
Boehm, M., Lulé, T., Fischer, H., Schulte, J., Schneider, B., Benthien, S., Blecher, F., Coors, S., Eckhardt, A., Keller, H., Rieve, P., Seibel, K., Sommer, M., Sterzel, J., Digest of the 1998 Symposium on VLSI Circuits, Honolulu, pp. 202–203 (1998).Google Scholar
Gidon, P., Giffard, B., Moussy, N., Parrein, P., Poupinet, L., Phys. Status Solidi A 207, No. 3, 704–707 (2010)CrossRefGoogle Scholar
Koch, C., Ito, M., Schubert, M., Solar Energy Materials & Solar Cells 68, 227–236 (2001)CrossRefGoogle Scholar
Bablich, A., Watty, K., Seibel, K., Boehm, M., Mat. Res. Soc. Proc. 1305, Cambridge University Press, AA8.2, Boston 2011, DOI: 10.1557/opl.2011.305 CrossRefGoogle Scholar