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Development of Nonvolatile Memory using Well-Ordered Ferroelectric Linear Molecules

Published online by Cambridge University Press:  01 February 2011

Kenji Ishida ,
Kazunari Katsumoto ,
Shuichiro Kuwajima ,
Toshihisa Horiuchi ,
Hirofumi Yamada  and
Kazumi Matsushige
Kenji Ishida
Affiliation:
Department of Electronic Science and Engineering, Graduate School of Engineering, Kyoto University, Kyotodaigaku Katsura, Nishikyo-ku, Kyoto 616–8510, Japan
Kazunari Katsumoto
Affiliation:
Department of Electronic Science and Engineering, Graduate School of Engineering, Kyoto University, Kyotodaigaku Katsura, Nishikyo-ku, Kyoto 616–8510, Japan
Shuichiro Kuwajima
Affiliation:
Nanotech Support Project, Kyoto University, Kyotodaigaku Katsura, Nishikyo-ku, Kyoto 616–8510, Japan.
Toshihisa Horiuchi
Affiliation:
Department of Electronic Science and Engineering, Graduate School of Engineering, Kyoto University, Kyotodaigaku Katsura, Nishikyo-ku, Kyoto 616–8510, Japan
Hirofumi Yamada
Affiliation:
Department of Electronic Science and Engineering, Graduate School of Engineering, Kyoto University, Kyotodaigaku Katsura, Nishikyo-ku, Kyoto 616–8510, Japan
Kazumi Matsushige
Affiliation:
Department of Electronic Science and Engineering, Graduate School of Engineering, Kyoto University, Kyotodaigaku Katsura, Nishikyo-ku, Kyoto 616–8510, Japan
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Abstract

Ferroelectric vinylidene fluoride (VDF) molecular films were fabricated by simple vacuum evaporation method, and the ferroelectric properties and its fatigue were investigated. Formation of ferroelectric phase in VDF oligomer with low molecular weight is favored at low substrate temperature around -150°C. The well-ordered VDF oligomer thin films exhibit a lager value of remanent polarization(130mC/m2) than that of Poly(VDF). Fatigues of polarization reversal can be performed over 10∧5 cycles. The VDF oligomer films can be one of candidates for disposable nonvolatile memory with unique features such as flexible, wide areas and low cost processing.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 830: Symposium D – Materials and Processes for Nonvolatile Memories , 2004 , D3.9
Copyright
Copyright © Materials Research Society 2005

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References

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