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The Detrimental Effect of a Passivation on the Electromigration Lifetime of Narrow Al-Si-Cu Lines

Published online by Cambridge University Press:  15 February 2011

A. Witvrouw ,
Ph. Roussel ,
B. Deweerdt  and
K. Maex
A. Witvrouw
Affiliation:
IMEC, Kapeldreef 75, 3001 Leuven, Belgium
Ph. Roussel
Affiliation:
IMEC, Kapeldreef 75, 3001 Leuven, Belgium
B. Deweerdt
Affiliation:
IMEC, Kapeldreef 75, 3001 Leuven, Belgium
K. Maex
Affiliation:
IMEC, Kapeldreef 75, 3001 Leuven, Belgium
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Abstract

2 mm long, 0.8 μm wide and 0.8 μ thick Al-Si-Cu lines, passivated with a 1.14 μm thick PETEOS SiO2 were found to have a lower electromigration lifetime compared to identical unpassivated lines. The high tensile stress in the passivated lines is assumed to accelerate electromigration failure. This is confirmed by the very low activation energy for electromigration failure in the passivated lines and by the multiple events of recovery during and after electromigration testing, suggesting failure sites are slit voids.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 391: Symposium T – Materials Reliability in Microelectronics V , 1995 , 447
Copyright
Copyright © Materials Research Society 1995

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