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Depth-Selective Investigation of Fe-Silicides Formed After Molecular Beam Epitaxy, Using Conversion Electron MÖSsbauer Spectrometry.

Published online by Cambridge University Press:  25 February 2011

S. Degroote ,
T. Kobayashi ,
J. Dekoster ,
A. Vantomme  and
G. Langouche
S. Degroote
Affiliation:
Instituut voor Kern- en Stralingsfysika, University ofLeuven, Celestijnenlaan 200D, B-3001 Leuven Research Assistant, NFWO (National Fund for Scientific Research, Belgium)
T. Kobayashi
Affiliation:
Instituut voor Kern- en Stralingsfysika, University ofLeuven, Celestijnenlaan 200D, B-3001 Leuven
J. Dekoster
Affiliation:
Instituut voor Kern- en Stralingsfysika, University ofLeuven, Celestijnenlaan 200D, B-3001 Leuven
A. Vantomme
Affiliation:
Instituut voor Kern- en Stralingsfysika, University ofLeuven, Celestijnenlaan 200D, B-3001 Leuven Postdoctaral Researcher, NFWO (National Fund for Scientific Research, Belgium)
G. Langouche
Affiliation:
Instituut voor Kern- en Stralingsfysika, University ofLeuven, Celestijnenlaan 200D, B-3001 Leuven
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Abstract

Fe-Silicides were formed by annealing MBE-deposited thin Fe layers with a thickness in the range of 24 Å on (7x7) reconstructed Si(l11) substrates. Samples suitable for depth-selective investigations by CEMS (Conversion Electron Mössbauer Spectrometry) were prepared by using only the 57Fe isotope for a few monolayers of the total Fe film, and depositing these selectively right at the interface or separated from it. During the growth the substrate was held at room temperature. The silicide formation upon annealing to temperatures up to 900°C was monitored in situ with RHEED. From the CEMS studies a drastically different sample composition was inferred as a function of monolayer distance from the interface for the as-deposited samples and for annealing temperatures up to 400°C. Analysis of these spectra indicates the presence of metastable and stable iron silicides.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 337: Symposium B – Advanced Metallization for Devices and Circuits—Science, Technology and Manufacturing III , 1994 , 685
Copyright
Copyright © Materials Research Society 1994

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References

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