Hostname: page-component-586b7cd67f-rdxmf Total loading time: 0 Render date: 2024-11-20T13:34:35.710Z Has data issue: false hasContentIssue false
  • English
  • Français

Deposition of Smooth Thin Cu Films in Deep Submicron Trench by Plasma CVD Reactor with H Atom Source

Published online by Cambridge University Press:  17 March 2011

Masaharu Shiratani ,
Hong Jie Jin ,
Yasuhiro Nakatake ,
Kazunori Koga ,
Toshio Kinoshita  and
Yukio Watanabe
Masaharu Shiratani
Affiliation:
Department of Electronics, Graduate School of Information Science and Electrical Engineering, Kyushu University, Hakozaki, Fukuoka 812-8581, Japan
Hong Jie Jin
Affiliation:
Department of Electronics, Graduate School of Information Science and Electrical Engineering, Kyushu University, Hakozaki, Fukuoka 812-8581, Japan
Yasuhiro Nakatake
Affiliation:
Department of Electronics, Graduate School of Information Science and Electrical Engineering, Kyushu University, Hakozaki, Fukuoka 812-8581, Japan
Kazunori Koga
Affiliation:
Department of Electronics, Graduate School of Information Science and Electrical Engineering, Kyushu University, Hakozaki, Fukuoka 812-8581, Japan
Toshio Kinoshita
Affiliation:
Department of Electronics, Graduate School of Information Science and Electrical Engineering, Kyushu University, Hakozaki, Fukuoka 812-8581, Japan
Yukio Watanabe
Affiliation:
Department of Electronics, Graduate School of Information Science and Electrical Engineering, Kyushu University, Hakozaki, Fukuoka 812-8581, Japan
Get access

Abstract

Effects of H irradiation on purifying Cu films and improving their surface roughness as well as size and orientation of Cu grains in the films have been examined using a newly developed plasma CVD reactor equipped with an H atom source, in which Cu(hfac)2 is supplied as the source material. The H irradiation is effective in purifying the Cu films, increasing the grain size, and reducing the surface roughness, while it has no effect on the grain orientation. The decrease in dissociation degree of material gas leads to reduction of the surface reaction probability of Cu- containing radicals, which is important to realize conformal deposition in fine trenches. Using the control of dissociation degree of material gas independent of H irradiation, we have demonstrated conformal deposition of smooth Cu films in the trench using the developed plasma CVD reactor.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 612: Symposium D – Materials, Technology & Reliability for Advanced Interconnects.. , 2000 , D9.2.1
Copyright
Copyright © Materials Research Society 2000

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. Copper Metallization in Industry, Mater. Res. Soc. Bull., 19, 15 (1994).Google Scholar
2. Lee, W. W. and Locke, P. S., Thin Solid Films, 262, 39 (1995).10.1016/0040-6090(95)05833-8Google Scholar
3. Burke, A., Braeckeimann, G., Manger, D., Eisenbraun, E., Kaloyeros, A. E., McVittie, J. P., Han, J., Bang, D., Loan, J. F. and Sullivan, J. J., J. Appl. Phys., 82, 4651 (1997).10.1063/1.366204Google Scholar
4. Jin, H. J., Shiratani, M., Kawasaki, T., Kawasaki, H., Toyofuku, M., Fukuzawa, T., Kinoshita, T. and Watanabe, Y., Jpn. J. Appl. Phys., 38, 4492 (1999).10.1143/JJAP.38.4492Google Scholar
5. Jin, H. J., Shiratani, M., Nakatake, Y., Koga, K., Kinoshita, T. and Watanabe, Y., Res. Rep. Information Science and Electrical Engineering Kyushu Univ., 5, 57 (2000).Google Scholar
6. Shiratani, M., Kawasaki, H., Fukuzawa, T., Kinoshita, T. and Watanabe, Y., J. Phys. D, 29, 2754 (1996).10.1088/0022-3727/29/11/005Google Scholar
7. Jin, H. J., Shiratani, M., Kawasaki, T., Kawasaki, H., Toyofuku, M., Fukuzawa, T., Kinoshita, T. and Watanabe, Y., J. Vac. Sci. & Technol. A, 17, 726 (1999).10.1116/1.581692Google Scholar
8. Kee-Won, C. R., Loke, A. L. S., Lee, H., Nogami, T., Dubin, V. M., Kavari, R. A., Ray, G. W. and Wong, S. S., IEEE Trans. Electron Devices., 46, 1113 (1999).Google Scholar