Hostname: page-component-848d4c4894-v5vhk Total loading time: 0 Render date: 2024-07-04T19:55:30.743Z Has data issue: false hasContentIssue false
  • English
  • Français

Deposition of Oxide Based Advanced Electronic and Optical Materials by Rapid Isothermal Processing (RIP) Assisted Metalorganic Chemical Vapor Deposition (MOCVD)

Published online by Cambridge University Press:  22 February 2011

J. Mavoori ,
R. Singh ,
R. Sharangpani ,
C. Gong ,
K. F. Poole ,
R. K. Singh  and
R. Natarajan
J. Mavoori
Affiliation:
Dept. of Electrical and Computer Engineering, Clemson University, Clemson, SC 29634
R. Singh
Affiliation:
Dept. of Electrical and Computer Engineering, Clemson University, Clemson, SC 29634
R. Sharangpani
Affiliation:
Dept. of Electrical and Computer Engineering, Clemson University, Clemson, SC 29634
C. Gong
Affiliation:
Dept. of Electrical and Computer Engineering, Clemson University, Clemson, SC 29634
K. F. Poole
Affiliation:
Dept. of Electrical and Computer Engineering, Clemson University, Clemson, SC 29634
R. K. Singh
Affiliation:
Dept. of Material Science & Engineering, University of Florida, Gainsville, FL
R. Natarajan
Affiliation:
Dept. of Electrical and Computer Engineering, Clemson University, Clemson, SC 29634
Get access

Abstract

Metalorganic chemical vapor deposition (MOCVD) is an ideal technique for the deposition of conducting and non-conducting oxide based thin film materials. In this paper we present our study of RIP assisted MOCVD for the low temperature deposition of a number of oxide based advanced materials which are useful for the development of the next generation of microelectronic and optoelectronic devices. We have designed several experiments to understand the role of photoeffects in RIP assisted MOCVD. The vacuum ultraviolet, ultraviolet and visible (λ ≤ 0.7–0.8μm) photons can have several beneficial effects including the enhancement of the surface reactions of the absorbed molecules through the perturbation of the electronic state of binding between the absorbed molecules and the solid surface. We have shown a direct relationship between the structural and electrical characteristics of the deposited oxide and the spectral contents of the energy source.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 342: Symposium G – Rapid Thermal and Integrated Processing III , 1994 , 201
Copyright
Copyright © Materials Research Society 1994

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

[1] Singh, R., Radpour, F., and Chou, P., J. Vac. Sci. and Technol. A7, 1456 (1989), Paper presented at the 35th AVS National Symposium, Nov. 1988.Google Scholar
[2] Singh, R., Chou, P., Radpour, F., Nelson, A. J., and Ullal, H. S., J. App. Phys. 66, 2381 (1989).Google Scholar
[3] Singh, R., Sinha, S., Thakur, R. P. S., and Chou, P., Appl. Phys. Lett. 58, 1217 (1991).Google Scholar
[4] Thakur, R. P. S. et al., J. App. Phys. 69, 367 (1991).Google Scholar
[5] Singh, R., Mavoori, J., and Thakur, R. P. S., Importance of the photoeffects in rapid isothermal processing (RIP), 1994, Presented at MRS Symposium, Spring 1994.Google Scholar
[6] Singh, R., Current trends in rapid isothermal processing (RIP), in Proceedings of the international conference on Beam Processing of Advanced Materials, edited by Singh, J. and Copley, S. M., pages 619–688, TMS, 1992.Google Scholar
[7] Spencer, J. T., Chemical vapor depostion of metal-containing thin film materials from orgnometallic compounds, in Progress in inorganic chemistry, edited by Karlin, K. D., volume 41, pages 145–248, John Wiley & Sons, 1993.CrossRefGoogle Scholar
[8] Singh, R., Ng, J. T. C., Sinha, S., and Dhall, V., Rev. of Scientific Instruments 64, 514 (1993).Google Scholar