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Deposition of Optimal a-Si:H and a-SiGe:H by HWCVD Using the Same Filament Temperature and Substrate Temperature

Published online by Cambridge University Press:  21 March 2011

A.H. Mahan ,
Y. Xu  and
L.M. Gedvilas
A.H. Mahan
Affiliation:
NREL, 1617 Cole Blvd., Golden, CO 80401
Y. Xu
Affiliation:
NREL, 1617 Cole Blvd., Golden, CO 80401
L.M. Gedvilas
Affiliation:
NREL, 1617 Cole Blvd., Golden, CO 80401
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Abstract

The incorporation of high Ge content a-SiGe:H into a low bandgap solar cell device commonly involves the use of bandgap (Ge) profiling. In previous work using the hot wire (HWCVD) technique, device quality low bandgap (ETauc = 1.25eV) a-SiGe:H films were deposited at low Tsub (∼200-250°C) filament operating at Tfil ∼ 1750-1800°C. However, higher bandgap films containing little or no Ge and deposited under the same low temperature (Tsub,Tfil) conditions were of decidedly inferior quality to those deposited using higher temperatures (Tfil∼2000°C,Tsub∼360°C) solar cell with an efficiency ∼ 5.85% was fabricated using these materials, it was clear that our best ‘end point’ materials alloying at this low Tfil severely limits film reproducibility and filament lifetime. This work explores deposition of device quality low bandgap a-SiGe:H and (high bandgap) a-Si:H, both at the same low Tsub, using a tantalum (Ta) filament operating at low Tfil. Film material properties are presented.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 808: Symposium A – Amorphous and Nanocrystaline Silicon Science and Technology-2004 , 2004 , A9.48
Copyright
Copyright © Materials Research Society 2004

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References

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