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Deposition of Monolayer-Scale Germanium/Silicon Heterostructures by Rapid Thermal Chemical Vapor Deposition

Published online by Cambridge University Press:  22 February 2011

A. St. Amour  and
J.C. Sturm
A. St. Amour
Affiliation:
Princeton University, Dept. of Electrical Engineering, Princeton, NJ 08544
J.C. Sturm
Affiliation:
Princeton University, Dept. of Electrical Engineering, Princeton, NJ 08544
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Abstract

Deposition of monolayer scale Ge/Si heterostructures by Rapid Thermal Chemical Vapor Deposition has been achieved for the first time. All previous work in this area was by Molecular Beam Epitaxy. We have observed the change in Ge growth rate at 500°C as the Si substrate was covered by the first monolayer of Ge. Auger Electron Spectroscopy and Raman scattering experiments determined that the CVD growth mode for Ge on Si (100) at 550°C is Stranski-Krastanov, with the transition to islanding occurring after three monolayers.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 342: Symposium G – Rapid Thermal and Integrated Processing III , 1994 , 31
Copyright
Copyright © Materials Research Society 1994

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References

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