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Deposition of Conductive Titanium Sub-Oxide Films by Reactive Ion-Beam Sputtering

Published online by Cambridge University Press:  25 February 2011

K.G. Grigorov ,
A.H. Benhocine ,
D. Bouchier  and
F. Meyer
K.G. Grigorov
Affiliation:
Institut d’Electronique Fondamentale, CNRS URA 0022, Bât. 220, Université Paris Sud, 91405 Orsay Cedex, France
A.H. Benhocine
Affiliation:
Institut d’Electronique Fondamentale, CNRS URA 0022, Bât. 220, Université Paris Sud, 91405 Orsay Cedex, France
D. Bouchier
Affiliation:
Institut d’Electronique Fondamentale, CNRS URA 0022, Bât. 220, Université Paris Sud, 91405 Orsay Cedex, France
F. Meyer
Affiliation:
Institut d’Electronique Fondamentale, CNRS URA 0022, Bât. 220, Université Paris Sud, 91405 Orsay Cedex, France
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Abstract

Titanium monoxide films were deposited on silicon by reactive ion beam sputtering from a Ti target. The film composition was measured in situ by Auger electron spectrometry. It was observed that oxygen content in the deposit does not depend on the substrate temperature, up to 600 °C. Synthesized TiO films had a cubic structure with a lattice parameter of 4.17 Å, which confirmed that the O/Ti concentration ratio in the films was very close to the expected value. The films were found to be conductive, with a resistivity value equal to 170 μΩ cm. They had a yellowish metallic appearence and a very smooth surface. Sequences of annealings at increasing temperatures were performed under ultra-high-vacuum. No AES signal from silicon was observed up to a temperature of 700 °C.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 337: Symposium B – Advanced Metallization for Devices and Circuits—Science, Technology and Manufacturing III , 1994 , 441
Copyright
Copyright © Materials Research Society 1995

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References

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