Hostname: page-component-586b7cd67f-tf8b9 Total loading time: 0 Render date: 2024-11-25T15:24:26.542Z Has data issue: false hasContentIssue false
  • English
  • Français

Deposition and Characterization of PECVD SiOC Films by Using Bistrimethylsilylmethane (BTMSM) Precursor

Published online by Cambridge University Press:  17 March 2011

Yoon-Hae Kim ,
Moo Sung Hwang ,
Young Lee  and
Hyeong Joon Kim
Yoon-Hae Kim
Affiliation:
School of Materials Science and Engineering, Seoul National UniversitySeoul 151-742, Korea
Moo Sung Hwang
Affiliation:
School of Materials Science and Engineering, Seoul National UniversitySeoul 151-742, Korea
Young Lee
Affiliation:
Jusung Engineering Co., Ltd, Kyunggi-Do 464-892, Korea
Hyeong Joon Kim
Affiliation:
School of Materials Science and Engineering, Seoul National UniversitySeoul 151-742, Korea
Get access

Abstract

Carbon-containing silicon oxide (SiOC) is regarded as a potential low dielectric constant (low-κ) material for an interlayer dielectric (ILD) in next generation interconnection. In this study, we present the fundamental film properties and integration process compatibility of the low-κ SiOC film deposited by using bistrimethylsilylmethane (BTMSM) precursor. As more carbon was incorporated into film, both film density and dielectric constant decreased. The lowest κ-value, which we have obtained in this study, was 2.3 and the hardness of SiOC film was 1.1GPa as well as showing the thermal stability up to 500°C. In case of using conventional gases, organic components in SiOC film restricted etch rate. However, O2 addition could make it possible to obtaine a reasonable etch rate. The post-treatment of SiOC film in hydrogen plasma improved the resistance to O2 plasma in ashing process. The compatibility of SiOC film to the CMP process was also examined.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 714: Symposium – Materials, Technology and Reliability for Advanced Interconnects and Low-k Dielectrics II , 2001 , L7.12.1
Copyright
Copyright © Materials Research Society 2001

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Kim, K., Kwon, D. H., Nallapati, G., and Lee, G. S., J. Vac. Sci. Technol. A 16, 1509 (1998)Google Scholar
2. Kim, Y.-H., Kim, H.-H., Lee, S.-K., Kim, H. J., Kim, S.-O., and Sohn, Y.-S., J. Kor. Phys. Soc. 33, S179 (1998)Google Scholar
3. Kim, Y.-H., Lee, S.-K., Kim, H. J., J. Vac. Sci. Technol. A 18(4), 1216 (2000)Google Scholar
4. Endo, K., Shinoda, K., and Tatsumi, T., J. Appl. Phys. 86, 2739 (1999)Google Scholar
5. Janowiak, C., Ellingboe, S., and Morey, I., J. Vac. Sci. Technol. A 18(4), 1859 (2000)Google Scholar
6. Chang, T.-C., Liu, P.-T., Mei, Y.-J., Mor, Y.-S., Perng, T.-H., Yang, Y.-L., and Sze, S. M., J. Vac. Sci. Technol. A 17(5), 2325 (1999)Google Scholar
7. Maddalon, C., Barla, K., Denis, E., Lous, E., Perrin, E., Lis, S., Lair, C., and Dehan, E., Microelectronic Engineering 50, 33 (2000)Google Scholar
8. Grill, A. and Patel, V., J. Appl. Phys. 85, 3314 (1999)Google Scholar
9. Kim, Y.-H., Kim, H. J., Kim, J. Y., and Lee, Y., J. Kor. Phys. Soc. 40(1), 94 (2002)Google Scholar
10. Kim, J. Y., Hwang, M. S., Kim, Y.-H., Kim, H. J., and Lee, Y., J. Appl. Phys. 90(5), 2469 (2001)Google Scholar