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A Dehydrogenation and Annealing Method of a-Si by Microwave

Published online by Cambridge University Press:  10 February 2011

C-M Park ,
J-H Jeon ,
C-H Kim  and
M-K Han
C-M Park
Affiliation:
School of EE, Seoul National University, Kwanak-ku, Seoul 151-742, Korea, e-mail: [email protected], phone: +82-2-880-7002, fax: +82-2-875-7372
J-H Jeon
Affiliation:
School of EE, Seoul National University, Kwanak-ku, Seoul 151-742, Korea, e-mail: [email protected], phone: +82-2-880-7002, fax: +82-2-875-7372
C-H Kim
Affiliation:
School of EE, Seoul National University, Kwanak-ku, Seoul 151-742, Korea, e-mail: [email protected], phone: +82-2-880-7002, fax: +82-2-875-7372
M-K Han
Affiliation:
School of EE, Seoul National University, Kwanak-ku, Seoul 151-742, Korea, e-mail: [email protected], phone: +82-2-880-7002, fax: +82-2-875-7372
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Abstract

We propose a new method for selective crystallization of amorphous silicon and source/drain ion impurities activation by microwave annealing. We have measured FTIR to investigate hydrogen content variation in PECVD a-Si film and examined the poly-Si grain structure by SEM. We have also observed the Raman spectroscopy in order to investigate the grain growth mechanism during microwave annealing.

In our experiment, a-Si layer between microwave absorbing layers was fully crystallized in 60 seconds and hydrogen content of a-Si under microwave reflective layer was not varied after 20 minutes microwave annealing. These results indicate that proposed method may be implemented for fabricating a-Si and poly-Si TFTs on the same glass substrate. We have fabricated the poly-Si and a-Si TFTs employing microwave annealing for active layer crystallization and source/drain activation by our method.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 508: Symposium B – Flat Panel Display Materials - 1998 , January 1998 , 115
Copyright
Copyright © Materials Research Society 1998

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References

1. Morimoto, Y., Hirano, K., Abe, H., Kuwahara, T., Hasegawa, I., Yuda, S., Sotani, N., and Yoneda, K., IEDM-95, pp. 837–840, 1995.Google Scholar
2. Kriegsmann, G. A., J. Appl. Phys., vol. 71, pp. 1960–1966, 1992.Google Scholar
3. Tian, Y. L., Theory and Applications in Microwave Processing Ceramic Transactions, vol. 21, pp. 283–300, 1991.Google Scholar
4. Othonos, A., Christofides, C., Boussey-Said, J., and Bisson, M., I. Appl. Phys., vol. 75, no. 12, pp. 8032–8038, 1994.Google Scholar