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Defect States in Excimer-Laser Crystallized Single-Grain TFTs Studied with Isothermal Charge Deep-level Transient Spectroscopy

Published online by Cambridge University Press:  01 February 2011

Vojtech Nadazdy ,
V. Rana ,
R. Ishihara ,
S. Lanyi ,
R. Durny ,
J.W. Metselaar  and
C.I.M. Beenakker
Vojtech Nadazdy
Affiliation:
[email protected], Institute of Physics Slovak Academy of Sciences, Depart,ent of Applied Physics, Dubravska cesta 9, Bratislava, Slovak Republic, 845 11, Slovakia
V. Rana
Affiliation:
[email protected], Delft University of Technology, DIMES, DELFT, N/A, N2628 CT, Netherlands
R. Ishihara
Affiliation:
[email protected], Delft University of Technology, DIMES, DELFT, N/A, N2628 CT, Netherlands
S. Lanyi
Affiliation:
[email protected], Institute of Physics Slovak Academy of Sciences, Dubravska cesta 9, Bratislava, Slovak Republic, 845 11, Slovakia
R. Durny
Affiliation:
[email protected], Slovak University of Technology, Department of Physics, Bratislava, N/A, 812 19, Slovakia
J.W. Metselaar
Affiliation:
[email protected], Delft University of Technology, DIMES, DELFT, N/A, N2628 CT, Netherlands
C.I.M. Beenakker
Affiliation:
[email protected], Delft University of Technology, DIMES, DELFT, N/A, N2628 CT, Netherlands
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Abstract

Defect states were quantitatively evaluated in single-grain (SG) Si thin-film transistors (TFTs), prepared by micro-Czochralski (grain filter) process with excimer-laser crystallization, by means of isothermal charge deep-level transient spectroscopy with a high sensitive charge/voltage converter. Its sensitivity reaches 10-16 C and it operates in the range of 2 microseconds - 10 ms. Measurements were performed on the SG-Si TFTs with various energy densities of laser crystallization, various channel areas, and positions in the grain. Our results indicate a direct correlation of fabrication parameters, parameters of the TFT determined from its transfer characteristics, and parameters of defect states (energy position in the band gap, concentration) induced by coincidence site lattice boundaries inside the location-controlled grains and by defects in the grain filter.

Keywords

Sideep level transient spectroscopy (DLTS)electrical properties
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 910: Symposium A – Amorphous and Polycrystalline Thin-Film Silicon Science and Technology – 2006 , 2006 , 0910-A19-02
Copyright
Copyright © Materials Research Society 2006

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References

references

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