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Defect Densities and Carrier Lifetimes in Oxygen doped Nanocrystalline Si

Published online by Cambridge University Press:  20 June 2013

Shantan Kajjam ,
Siva Konduri ,
Max Noack ,
G. Shamshimov ,
N. Ussembayev  and
Vikram Dalal
Shantan Kajjam
Affiliation:
Department of Electrical & Computer Engineering, Iowa State University, Ames IA 50014
Siva Konduri
Affiliation:
Department of Electrical & Computer Engineering, Iowa State University, Ames IA 50014
Max Noack
Affiliation:
Microelectronics Research Center, Iowa State University, Ames IA 50014
G. Shamshimov
Affiliation:
Nazarbayev University, Astana, Kazakhstan
N. Ussembayev
Affiliation:
Nazarbayev University, Astana, Kazakhstan
Vikram Dalal
Affiliation:
Department of Electrical & Computer Engineering, Iowa State University, Ames IA 50014
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Abstract

We report on the measurement of defect densities and minority carrier lifetimes in nanocrystalline Si samples contaminated with controlled amounts of oxygen. Two different measurement techniques, a capacitance-frequency (CF) and high temperature capacitance-voltage techniques were used. CF measurement is found to yield noisy defect profiles that could lead to inconclusive results. In this paper, we show an innovative technique to remove the noise and obtain clean data using wavelet transforms. This helps us discover that oxygen is creating both shallow and deep/midgap defect states in lieu with crystalline silicon. Minority carrier lifetime measured using reverse recovery techniques shows excellent inverse correlation between deep defects and minority carrier lifetimes through which hole capture cross section can be evaluated.

Keywords

Siphotovoltaicplasma-enhanced CVD (PECVD) (deposition)
Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 1536: Symposium A – Film Silicon Science and Technology , 2013 , pp. 169 - 173
Copyright
Copyright © Materials Research Society 2013 

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References

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