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Decrease in Minority Carrier Lifetime of Crystalline Silicon Caused by Rapid Heating

Published online by Cambridge University Press:  18 May 2012

Toshiyuki Sameshima ,
Kochi Betsuin  and
Shinya Yoshidomi
Toshiyuki Sameshima
Affiliation:
Tokyo University of Agriculture and Technology, Koganei, Tokyo 184-8588, Japan
Kochi Betsuin
Affiliation:
Tokyo University of Agriculture and Technology, Koganei, Tokyo 184-8588, Japan
Shinya Yoshidomi
Affiliation:
Tokyo University of Agriculture and Technology, Koganei, Tokyo 184-8588, Japan
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Abstract

Change in the light-induced minority carrier effective lifetime τeff of crystalline silicon caused by rapid laser heating is reported. The top surface of n- and p-type silicon substrates with thicknesses of 520 μm coated with thermally grown SiO2 layers were heated by a 940 nm semiconductor laser for 4 ms. τeff was measured by a method of microwave absorption caused by carriers induced by 620 nm light illumination at 1.5 mW/cm2. τeff for light illumination of the top surfaces was decreased to 1.0x10-5 and 4.8x10-6 s by laser heating at 5.0x104 W/cm2 for n- and ptype 520-μm-thick silicon substrates, respectively. The decrease in τeff resulted from the generation of defect states associated with the carrier recombination velocity at the top surface region, Stop. Laser heating increased Stop to 6000 and 10000 cm/s for n- and p-type silicon samples, respectively. Heat treatment at 400oC for 4h markedly decreased Stop to 21 and 120 cm/s, respectively, for n- and p-type silicon samples heated at 5.0x104 W/cm2. Laser heating at 4.0x104 W/cm2 for 4 ms was also applied to samples treated with Ar plasma irradiation at 50 W for 60 s, which decreased τeff (top) to 2.0x10-5 s and 3.9x10-6 s for n- and p-type silicon samples, respectively. Laser heating successfully increased τeff (top) to 2.8x10-3 and 4.1x10-4 s for n- and p-type samples, respectively. Laser irradiation at 4x104 W/cm2played a role of curing recombination defect sites.

Keywords

semiconductingSiphotovoltaic
Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 1426: Symposium A – Amorphous and Polycrystalline Thin-Film Silicon Science and Technology–2012 , 2012 , pp. 353 - 358
Copyright
Copyright © Materials Research Society 2012

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References

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