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A Damage Integral Based Analysis and Simulation of the Thermal Fatigue of Diebonds

Published online by Cambridge University Press:  15 February 2011

David A. Lilienfeld ,
Peter Børgesen  and
Che-Yu Li
David A. Lilienfeld
Affiliation:
National Nanofabrication Facility, Cornell University, Ithaca, NY 14853
Peter Børgesen
Affiliation:
Department of Materials Science and Engineering, Cornell University, Ithaca, NY 14853
Che-Yu Li
Affiliation:
Department of Materials Science and Engineering, Cornell University, Ithaca, NY 14853
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Abstract

Microelectronic packages undergo substantial thermal excursions during processing and often in service. Differences in the thermal expansion of the various components may therefore lead to fatigue of the interconnects. A computer simulation has been developed which is based on a damage integral approach for the modeling of damage and failure in the various bonding layers found throughout such a package. This code should apply equally well to solder die bonds and polymeric or epoxy adhesive layers, assuming that the corresponding crack growth parameters and constitutive relations are known. Using literature values for these properties, predictions have been compared to experimental thermal cycling data for solder die bonds. Consequences for the extrapolation of accelerated test results to service conditions are discussed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 323: Symposium J – Electronic Packaging Materials Science VII , 1993 , 245
Copyright
Copyright © Materials Research Society 1994

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