Hostname: page-component-cd9895bd7-gxg78 Total loading time: 0 Render date: 2024-12-27T01:56:39.862Z Has data issue: false hasContentIssue false
  • English
  • Français

Current-Stress-Induced Interface States in p-Si Mos Diodes Detected by a.c. Conductance Measurement

Published online by Cambridge University Press:  15 February 2011

Masao Inoue  and
Junji Shirafuji
Masao Inoue
Affiliation:
Osaka University, Faculty of Engineering, Department of Electrical Engineering, Yamada-oka 2-1, Suita, Osaka 565, Japan
Junji Shirafuji
Affiliation:
Osaka University, Faculty of Engineering, Department of Electrical Engineering, Yamada-oka 2-1, Suita, Osaka 565, Japan
Get access

Abstract

Effect of Fowler-Nordheim current stress on (100) p-Si metal/oxide/semiconductor diodes have been studied by means of a.c. conductance measurement. Growth of two distinct peaks are observed in the depletion and the inversion resions corresponding to the generation of two kinds of defects in the upper and lower halves of the bandgap. These defects show different behaviors against the current stress in the energy profiles of the density and the capture cross section. The degradation of the Si/SiO2 interface is discussed in relation to the defect creation.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 391: Symposium T – Materials Reliability in Microelectronics V , 1995 , 133
Copyright
Copyright © Materials Research Society 1995

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1 Nishioka, Y., da Silva, E. F. and -P. Ma, T., J. Appl. Phys. 64, 3317 (1988).Google Scholar
2 Yamada, H. and Makino, T., Appl. Phys. Lett. 59, 2159 (1991).Google Scholar
3 M.Inoue, and J.Shirafuji, , in Materials Reliability in Microelectronics IV, edited by Børgesen, P., Coburn, J. C., Sanchez, J. E., Rodbell, K. P. and Filter, W. F. (Mater. Res. Soc. Proc. 338, San Francisco, CA, 1994) pp. 69–74.Google Scholar
4 Fischetti, M. V., Weinberg, Z. A. and Calise, J. A., J. Appl. Phys. 57, 418 (1985).Google Scholar
5 Fischetti, M. V., J. Appl. Phys. 57, 2860 (1985).Google Scholar
6 Buchanan, D. A. and DiMaria, D. J., J. Appl. Phys. 67, 7439 (1990).Google Scholar
7 Nishioka, Y., da Silva, E. F. and -P. Ma, T., IEEE Trans. Electron. Dev. Lett. EDL-8, 566 (1987).Google Scholar
8 Papadas, C., Morfouli, P., Ghibaudo, G. and Pananakakis, G., Solid-State Electron. 34, 1375 (1991).Google Scholar
9 Zekeriya, V. and -P. Ma, T., IEEE Trans. Nucl. Sci. NS-31, 1261 (1984).Google Scholar
10 Lai, S. K., J. Appl. Phys. 54, 2540 (1983).Google Scholar
11 Nicollian, E. H. and Goetzberger, A., Bell Syst. Tech. J. 46, 1055 (1967).Google Scholar
12 M.J.Uren, , K.M.Brunson, and A.M.Hodge, , Appl. Phys. Lett. 60, 624 (1992).Google Scholar
13 Haneji, N., Vishnubhotla, L. and -P. Ma, T., Appl. Phys. Lett. 59, 3416 (1991).Google Scholar