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Crystallization Characteristics of Ge-Sb Phase Change Materials

Published online by Cambridge University Press:  31 January 2011

Simone Raoux ,
Cyril Cabral ,
Lia Krusin-Elbaum ,
Jean L. Jordan-Sweet ,
Martin Salinga ,
Anita Madan  and
Teresa Pinto
Simone Raoux
Affiliation:
[email protected], IBM Almaden Research Center, 650 Harry Road, San Jose, California, 95120, United States, 408 927 2069, 408 927 2510
Cyril Cabral
Affiliation:
[email protected], IBM T. J. Watson Research Center, Yorktown Heights, New York, United States
Lia Krusin-Elbaum
Affiliation:
[email protected], IBM T. J. Watson Research Center, Yorktown Heights, New York, United States
Jean L. Jordan-Sweet
Affiliation:
[email protected], IBM T.J. Watson Research Center, Yorktown Heights, New York, United States
Martin Salinga
Affiliation:
[email protected], 1. Physikalisches Institut (1A), RWTH University of Technology, Aachen, Germany
Anita Madan
Affiliation:
[email protected], IBM Hudson Valley Research Park, Hopewell Junction, New York, United States
Teresa Pinto
Affiliation:
[email protected], IBM Hudson Valley Research Park, Hopewell Junction, New York, United States
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Abstract

The crystallization behavior of Ge-Sb phase change materials with variable Ge:Sb ratio X between 0.079 and 4.3 was studied using time-resolved x-ray diffraction, differential scanning calorimetry, x-ray reflectivity, optical reflectivity and resistivity vs. temperature measurements. It was found that the crystallization temperature increases with Ge content from about 130 °C for X = 0.079 to about 450 °C for X = 4.3. For low X, Sb x-ray diffraction peaks occurred during a heating ramp at lower temperature than Ge diffraction peaks. For X = 1.44 and higher, Sb and Ge peaks occurred at the same temperature. Mass density change upon crystallization and optical and electrical contrast between the phases show a maximum for the eutectic alloy with X = 0.17. The large change in materials properties with composition allows tailoring of the crystallization properties for specific application requirements.

Keywords

phase transformationGeSb
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1160: Symposium H – Materials and Physics for Nonvolatile Memories , 2009 , 1160-H14-07
Copyright
Copyright © Materials Research Society 2009

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References

[1] Wuttig, M. and Yamada, N, Nature Mater. 6, 824 (2007).Google Scholar
[2] Gleixner, B., Pirovano, A., Sarkar, J., Ottogalli, F., Tortorelli, I., Tosi, M. and Bez, R., Proc. International Reliability Physics Symposium '07, p. 542 (2007)Google Scholar
[3] Krebs, D., Raoux, S., Rettner, C. T., Shelby, R. M., Burr, G. W. and Wuttig, M., Mar. Res. Soc. Proc. Vol. 1072, paper 1072–G06 (2008)Google Scholar
[4] Raoux, S., Jordan-Sweet, J. L., and Kellock, A., J. Appl. Phys. 103, 114310 (2008).Google Scholar
[5] Cabral, C. Jr., Krusin-Elbaum, L., Bruley, J., Raoux, S., Deline, V., Madan, A., and Pinto, T., Appl. Phys Lett. 93, 071906 (2008)Google Scholar
[6] Raoux, S., Cabral, C. Jr., Krusin-Elbaum, L., Jordan-Sweet, J. L., Virwani, K., Hitzbleck, M., Salinga, M., Madan, A., and Pinto, T. L., J. Appl. Phys. 105, 064918 (2009)Google Scholar
[7] Okabe, T., Endo, S., and Saito, S., J. Non-Cryst. Solids 117/118, 222 (1990)Google Scholar
[8] Pozo, J. M. Del, Herrero, M. P. and Diaz, L., J. Non-Cryst. Solids 185, 183 (1995)Google Scholar
[9] Lankhorst, M. H. R., J. Non-Crystall. Solids 297, 210 (2002).Google Scholar
[10] Raoux, S., Salinga, M., Jordan-Sweet, J. L., and Kellock, A., J. Appl. Phys. 101, 044909 (2007)Google Scholar
[11] Kalb, J., Wuttig, M., and Spaepen, F., J. Mater. Res. 22, 748 (2007)Google Scholar