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Crystal Growth Study of Silicon and Germanium Wafers Used for Photovoltaic Devices
Published online by Cambridge University Press: 21 February 2011
Abstract
To develop the EPR material quality, electrical and structural charact erizations were executed by EBIC, LBIC, TEM, ECP and X diffraction. Two interface types were observed; some interfaces parallel and constitued by Σ3 and Σ9 twins, show low electrical activity; other are curved with no defined index and higher electrical activity. Some orientations such as (111),(220),(331) appear more frequently.
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- Copyright © Materials Research Society 1990
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