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Crystal Growth Study of Silicon and Germanium Wafers Used for Photovoltaic Devices

Published online by Cambridge University Press:  21 February 2011

A. Chibani ,
S. Sof ,
M. Hamoud ,
R. Gauthier  and
P. Pinard
A. Chibani
Affiliation:
Laboratoire de Physique de la Matière (associè CNRS) -Institut National des Sciences Appliquèes de Lyon, 69621-Villeurbanne, FRANCE.
S. Sof
Affiliation:
Laboratoire de Physique de la Matière (associè CNRS) -Institut National des Sciences Appliquèes de Lyon, 69621-Villeurbanne, FRANCE.
M. Hamoud
Affiliation:
Laboratoire de Physique de la Matière (associè CNRS) -Institut National des Sciences Appliquèes de Lyon, 69621-Villeurbanne, FRANCE.
R. Gauthier
Affiliation:
Laboratoire de Physique de la Matière (associè CNRS) -Institut National des Sciences Appliquèes de Lyon, 69621-Villeurbanne, FRANCE.
P. Pinard
Affiliation:
Laboratoire de Physique de la Matière (associè CNRS) -Institut National des Sciences Appliquèes de Lyon, 69621-Villeurbanne, FRANCE.
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Abstract

To develop the EPR material quality, electrical and structural charact erizations were executed by EBIC, LBIC, TEM, ECP and X diffraction. Two interface types were observed; some interfaces parallel and constitued by Σ3 and Σ9 twins, show low electrical activity; other are curved with no defined index and higher electrical activity. Some orientations such as (111),(220),(331) appear more frequently.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 182: Symposium C – Polysilicon Thin Films and Interfaces , 1990 , 49
Copyright
Copyright © Materials Research Society 1990

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References

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