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Critical Thickness for Three-Dimensional Epitaxial Island Growth

Published online by Cambridge University Press:  22 February 2011

K. Jagannadham  and
J. Narayan
K. Jagannadham
Affiliation:
Materials Science and Engineering, North Carolina State University, Raleigh, North Carolina 27695
J. Narayan
Affiliation:
Materials Science and Engineering, North Carolina State University, Raleigh, North Carolina 27695
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Abstract

The generation of misfit dislocation loops in three-dimensional epitaxial islands grown on thick substrates is analyzed. The coherent strain in the island is described by virtual interfacial dislocation loops situated in the interface. The traction free surface boundary conditions are satisfied by the surface dislocation loops situated on the surface of the island. A misfit dislocation loop is formed and the changes in the energy of the configuration used to determine if the total energy is lowered. The numerical analysis is carried out forhemispherical islands of GaAs grown on (100) silicon with a misfit dislocation of Burgers vector 3.84 Å. It has been found energetically favorable to nucleate a misfit dislocation loop at a distance of 3 å from the interface when the radius of the hemispherical island is equal to or greater than 40 å. In addition, a misfit dislocation loop could be nucleated at a larger distance from the interface when the size of the island is larger.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 130: Symposium C – Thin Films: Stresses and Mechanical Properties I , 1988 , 191
Copyright
Copyright © Materials Research Society 1989

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