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CoSi2 formation using a Ti capping layer - The influence of processing conditions on CoSi2 nucleation.

Published online by Cambridge University Press:  21 March 2011

C. Detavernier ,
R.L. Van Meirhaeghe  and
K. Maex
C. Detavernier
Affiliation:
Department of Solid State Sciences, Ghent University, Krijgslaan 281/S1, B-9000, Gent, Belgium
R.L. Van Meirhaeghe
Affiliation:
Department of Solid State Sciences, Ghent University, Krijgslaan 281/S1, B-9000, Gent, Belgium
K. Maex
Affiliation:
IMEC, Kapeldreef 75, B-3001 Leuven, Belgium. also at E.E. Dept, K.U. Leuven, B-3001 Leuven, Belgium
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Abstract

A reactive Ti capping layer is needed to getter oxygen contamination and to make the cobalt silicidation reaction a more robust process. However, the presence of a Ti capping layer induces two other effects (in addition to the beneficial gettering of oxygen impurities): the formation temperature of CoSi2 is increased and the CoSi2 layer has a strong (220) preferential orientation. Because of the current technological importance of the Ti/Co/Si system, we have made a detailed investigation of the influence of several process parameters (annealing temperature, selective etching, layer thickness) on the nucleation of CoSi2 in the Ti/Co/Si system. Moreover, it is shown that the addition of Ni (i.e. a Ti/Co/Ni/Si or Ti/Ni/Co/Si structure) causes a decrease of the CoSi2 nucleation temperature.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 670: Symposium K – Gate Stack and Sillicide Issues in Silicon , 2001 , K7.4
Copyright
Copyright © Materials Research Society 2001

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References

REFERENCES

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