Hostname: page-component-586b7cd67f-t7czq Total loading time: 0 Render date: 2024-11-25T16:38:42.302Z Has data issue: false hasContentIssue false
  • English
  • Français

Correlation of Performance and Hot Carrier Stress Reliability of Polycrystalline Silicon Thin-Film Transistors With Substrates and Substrate Coating

Published online by Cambridge University Press:  10 February 2011

Y. Z. Wang  and
O. O. Awadelkarim
Y. Z. Wang
Affiliation:
Electronic Materials and Processing Research LaboratoryThe Pennsylvania State University, University Park, PA 16802, [email protected]
O. O. Awadelkarim
Affiliation:
Electronic Materials and Processing Research LaboratoryThe Pennsylvania State University, University Park, PA 16802, [email protected]
Get access

Abstract

We report on the performance and hot carrier stress (HCS) reliability of n-channel poly-Si TFTs fabricated on bare or SiO2-coated low-alkali glass, or fused silica substrates. Low-pressure chemical vapor deposited (LPCVD) SiO2 films with different thicknesses are used as impurity diffusion barrier layers. We have found that the performance and HCS reliability of n-TFTs on the SiO2-coated glass are superior to those of n-TFTs on bare glass, and comparable to those of TFTs on fused silica. We also explore the impact of the SiO2 coating thickness on the performance and HCS reliability of the TFTs. The HCS reliability of the TFTs on SiO2-coated glass substrates is observed to depend on the SiO2 coating thickness. This is explained in terms of a phenomenological model which involves impurity and grain boundary traps.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 508: Symposium B – Flat Panel Display Materials - 1998 , January 1998 , 91
Copyright
Copyright © Materials Research Society 1998

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. Yin, Aiguo and Fonash, S. J., J. Vac. Sci. Technol. A 12, 1237 (1994).Google Scholar
2. Wu, I.-W., Solid State Phenomena 37–38, 553 (1994).Google Scholar
3. Im, J. S. and Sposili, R. S., MRS Bulletin, 21 (3), 39 (1996).Google Scholar
4. Wang, Y. Z. and Awadelkarim, O. O., Semocond. Sci. Technol. 13, 532 (1998).Google Scholar
5. De Groot, A. W., McGonigal, G. C., Thomson, D. J., and Card, H. C., J. Appl. Phys. 55, 312 (1984).Google Scholar
6. Fossum, J. G., Ortiz-Conde, A., Shichijo, H., and Banerjee, S., IEEE Trans. Electron Devices, ED–32, 1878 (1985).Google Scholar
7. Banerjee, S., Sundaresan, R., Shichijo, H., and Malhi, S., IEEE Trans. Electron Devices 35, 152 (1988).Google Scholar
8. Wang, Y. Z., Fonash, S. J., Awadelkarim, O. O., and Gu, T., submitted to J. Electrochem. Soc., (1998).Google Scholar
9. Suntharalingam, V., and Fonash, S. J., Appl. Phys. Lett. 68, 1400 (1996).Google Scholar
10. Fu, G. H., Du, J. F., Pan, D. H., and He, O. L., Journal of Non-Crystalline Solids 112, 454 (1989).Google Scholar
11. Nix, W. D., Metallurgical Transactions A 20A, 2217 (1989).Google Scholar