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Correlation between Surface Charge Accumulation and Excitation Intensity Dependent Red-Shifted Micro-Photoluminescence of Si-Implanted Quartz with Embedded Si Nanocrystals

Published online by Cambridge University Press:  21 March 2011

Chun-Jung Lin ,
Kuo-Cheng Yu ,
Hao-Chung Kuo ,
Miao-Jia Ou-yang  and
Gong-Ru Lin
Chun-Jung Lin
Affiliation:
Institute of Electro-Optical Engineering, National Chiao Tung University, 1001, Ta Hsueh Rd., Hsinchu, Taiwan 300, R.O.C.
Kuo-Cheng Yu
Affiliation:
Institute of Electro-Optical Engineering, National Chiao Tung University, 1001, Ta Hsueh Rd., Hsinchu, Taiwan 300, R.O.C.
Hao-Chung Kuo
Affiliation:
Institute of Electro-Optical Engineering, National Chiao Tung University, 1001, Ta Hsueh Rd., Hsinchu, Taiwan 300, R.O.C.
Miao-Jia Ou-yang
Affiliation:
Institute of Electro-Optical Engineering, National Chiao Tung University, 1001, Ta Hsueh Rd., Hsinchu, Taiwan 300, R.O.C.
Gong-Ru Lin
Affiliation:
Institute of Electro-Optical Engineering, National Chiao Tung University, 1001, Ta Hsueh Rd., Hsinchu, Taiwan 300, R.O.C.
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Abstract

The excitation intensity dependency of nanocrystallite Si (nc-Si) related micro-photoluminescence (μ-PL) from the multi-recipe Si-implanted quartz is characterized. The μ-PL at 724 nm contributed by nc-Si with 3-4 nm diameter is maximized after annealing at 1100°C for 3 hours. By increasing the excitation intensity from 10 kW/cm2 to 300 kW/cm2, the μ-PLs of 1-hr and 3-hr annealed quartz significantly red-shift from 723 nm to 725 nm and from 724 nm to 735 nm, respectively. This can be explained by the anomalous quantum stark effect due to a surface electric field oriented from photo-ionized nc-Si dots to quartz surface. After 1-hr illumination at power of 300 kW/cm2, the μ-PL peak wavelength of 3-hr annealed sample is further red-shifted by 2.5 nm. By measuring the accumulated surface charges built up during optical excitation process, the correlation between excitation-intensity dependent PL wavelength red-shift and the photo-ionized nc-Si surface electric-field related quantum stark effect is primarily elucidated.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 808: Symposium A – Amorphous and Nanocrystaline Silicon Science and Technology-2004 , 2004 , A4.37
Copyright
Copyright © Materials Research Society 2004

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References

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