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Correlation Between Oxygen Composition and Electrical Properties in NiO Thin Films for Resistive Random Access Memory

Published online by Cambridge University Press:  01 February 2011

Yusuke Nishi
Affiliation:
[email protected], Kyoto University, Kyoto, Japan
Tatsuya Iwata
Affiliation:
[email protected], Kyoto University, Kyoto, Japan
Tsunenobu Kimoto
Affiliation:
[email protected], Kyoto University, Kyoto, Japan
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Abstract

Admittance spectroscopy measurement has been performed on NiOx thin films with various oxygen compositions (x=1.0-1.2) in order to characterize localized defect levels. The activation energy and concentration of localized defect levels in NiOx films with low oxygen composition (x≤1.07) are 120-170 meV and lower than 2×1019 cm-3, respectively. From I-V measurement of the Pt/NiOx/Pt structures, samples with high oxygen composition (x≥1.10) did not show resistance switching operation, while samples with low oxygen composition (x≤1.07) did. The best oxygen composition of NiOx thin films turned out to be 1.07 in order to realize repeatable and stable resistance switching operation.

Type
Research Article
Copyright
Copyright © Materials Research Society 2010

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References

1 Gibbons, J. F. and Beadle, W. E., Solid State Electron., 7, 785 (1964).10.1016/0038-1101(64)90131-5Google Scholar
2 Baek, I. G., Lee, M. S., Seo, S., Lee, M. J., Seo, D. H., Suh, D.-S., Park, J. C., Park, S. O., Kim, H. S., Yoo, I. K., Chung, U-In, and Moon, J. T., Tech. Digests of the 2004 IEEE Int. Electron Devices Meet., pp. 587590.Google Scholar
3 Shima, H., Takano, F., Akinaga, H., Tamai, Y., Inoue, I. H., and Takagi, H., Appl. Phys. Lett. 91, 012901 (2007).10.1063/1.2753101Google Scholar
4 Chen, A., Haddad, S., Wu, Y.-C., Fang, T.-N., Lan, Z., Avanzino, S., Pangrle, S., Buynoski, M., Rathor, M., Cai, W., Tripsas, N., Bill, C., VanBuskirk, M., and Taguchi, M., Tech. Digests of the 2005 IEEE Int. Electron Devices Meet., pp. 746749.Google Scholar
5 Argall, F., Solid State Electron. 11, 535 (1968).10.1016/0038-1101(68)90092-0Google Scholar
6 Choi, B. J., Jeong, D. S., Kim, S. K., Rohde, C., Choi, S., Oh, J. H., Kim, H. J., Hwang, C. S., Szot, K., Waser, R., Reichenberg, B., and Tiedke, S., J. Appl. Phys., 98, 033715 (2005).Google Scholar
7 Daal, H. J. Van and Bosman, A. J., Phys. Rev., 158, 736 (1967).10.1103/PhysRev.158.736Google Scholar
8 Pautrat, J. L., Katircioglu, B., Magnea, N., Bensahel, D., Pfister, J. C. and Revoil, L., Solid State Electron., 23, 1159 (1980).10.1016/0038-1101(80)90028-3Google Scholar