Hostname: page-component-745bb68f8f-d8cs5 Total loading time: 0 Render date: 2025-02-11T06:36:27.285Z Has data issue: false hasContentIssue false
  • English
  • Français

Copper-Enhanced Solid Phase Crystallization of Amorphous Silicon Films

Published online by Cambridge University Press:  10 February 2011

Dong Kyun Sohn ,
Dae Gyu Moon  and
Byung Tae Ahn
Dong Kyun Sohn
Affiliation:
Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology, 373-1 Koosung-dong, Yusung-gu, Taejon 305-701, Korea
Dae Gyu Moon
Affiliation:
Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology, 373-1 Koosung-dong, Yusung-gu, Taejon 305-701, Korea
Byung Tae Ahn
Affiliation:
Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology, 373-1 Koosung-dong, Yusung-gu, Taejon 305-701, Korea
Get access

Abstract

Low-temperature crystallization of amorphous Si (a-Si) films was investigated by adsorbing copper ions on the surface of the films. The copper ions were adsorbed by spincoating of Cu solution. This new process lowered the crystallization temperature and reduced crystallization time of a-Si films. For 1000 ppm solution, the a-Si film was partly crystallized down to 500°C in 20 h and almost completely crystallized at 530°C in 20 h. The adsorbed Cu on the surface acted as a seed of crystalline and caused fractal growth. The fractal size was varied from 10 to 200 prm, depending on the Cu concentration in solution. But the grain size of the films was about 400 nm, which was similar to that of intrinsic films crystallized at 600°C.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 424: Symposium H – Flat Panel Display Materials II , 1996 , 225
Copyright
Copyright © Materials Research Society 1997

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. Oshima, H. and Morozumi, S., Ext. Abstr. Int. Conf. Solid State Devices and Materials. Yokohama, 1991, p 577 (1991).Google Scholar
2. Kohno, A., Sameshima, T., Sano, N., Sekiya, M. and Hara, M., IEEE Trans. Electron Devices 42, 251 (1995).Google Scholar
3. Nakazawa, K., J. Appl. Phys. 69, 1703 (1991).Google Scholar
4. Russel, S. W., Li, J. and Mayer, J. W., J. Appl. Phys. 70, 5153 (1991).Google Scholar
5. Sohn, D. K., Lee, J. N., Kang, S. W. and Ahn, B. T., Jpn. J. Appl. Phys. 35, 1005 (1996).Google Scholar