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Copper-Based Ohmic Contacts For The SiGe/Si Heterojunction Bipolar Transistor (HBT) Structure

Published online by Cambridge University Press:  10 February 2011

K. Das  and
S. A. Alterovitz
K. Das
Affiliation:
Department of Electrical Engineering, Tuskegee University, Tuskegee, AL 36088
S. A. Alterovitz
Affiliation:
NASA Glenn Research Center, 21000 Brookpark Road, Cleveland, OH 44135
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Abstract

A Cu-based metallization scheme has been studied for establishing low resistance contacts for a Si/SiGe/Si heterojunction bipolar transistor (HBT) structure. As-grown doped layers were further implanted with BF2 and As ions for the p-type base and n-type emitter layers, respectively, in order to produce a low sheet resistance surface layer. Contacts were metallized using an e-beam deposited multilayer structure of Ti/Cu/Ti/Al. Specific contact resistances of the order of 10−7 Ω cm2 or lower were obtained.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 564: Symposium N – Advanced Interconnects and Contacts , 1999 , 195
Copyright
Copyright © Materials Research Society 1999

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