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Conductance transient comparative analysis of ECR-PECVD deposited SiNx, SiO2/SiNx and SiOxNy dielectric films on silicon substrates

Published online by Cambridge University Press:  01 February 2011

H. Castán ,
S. Dueñas ,
J. Barbolla ,
A. Del Prado ,
E. San Andrés ,
I. Mártil  and
G. González-Díaz
H. Castán
Affiliation:
Departamento de Electricidad y Electrónica, E.T.S.I. Telecomunicación, Campus “Miguel Delibes”, Universidad de Valladolid, 47011 Valladolid., Spain.
S. Dueñas
Affiliation:
Departamento de Electricidad y Electrónica, E.T.S.I. Telecomunicación, Campus “Miguel Delibes”, Universidad de Valladolid, 47011 Valladolid., Spain.
J. Barbolla
Affiliation:
Departamento de Electricidad y Electrónica, E.T.S.I. Telecomunicación, Campus “Miguel Delibes”, Universidad de Valladolid, 47011 Valladolid., Spain.
A. Del Prado
Affiliation:
Departamento de Electricidad y Electrónica, E.T.S.I. Telecomunicación, Campus “Miguel Delibes”, Universidad de Valladolid, 47011 Valladolid., Spain.
E. San Andrés
Affiliation:
Departamento de Física Aplicada III (Electricidad y Electrónica), Facultad de Ciencias Físicas, Universidad Complutense, 28040 Madrid., Spain.
I. Mártil
Affiliation:
Departamento de Física Aplicada III (Electricidad y Electrónica), Facultad de Ciencias Físicas, Universidad Complutense, 28040 Madrid., Spain.
G. González-Díaz
Affiliation:
Departamento de Electricidad y Electrónica, E.T.S.I. Telecomunicación, Campus “Miguel Delibes”, Universidad de Valladolid, 47011 Valladolid., Spain.
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Abstract

A study of metal-insulator-semiconductor (MIS) structures based on SiNx, SiO2/SiNx and SiOxNy films deposited on silicon by electron cyclotron resonance plasma-enhanced chemical vapour deposition (ECR-PECVD) is presented. Interface trap densities measured by deep level transient spectroscopy (DLTS) are higher for silicon oxynitride-based MIS capacitors than for silicon nitride and silicon oxide-silicon nitride-based ones. However, conductance transient analysis demonstrated that Al/SiNx/Si devices exhibit the highest disordered-induced gap states (DIGS) density, whereas the lowest one corresponds to Al/SiNx/SiO2/Si, and silicon oynitride-based MIS capacitors show an intermediate behaviour. In addition, thermal treatments applied to Al/SiOxNy/Si samples reduce DIGS densities to values even lower than those corresponding to Al/SiNx/SiO2/Si devices.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 786: Symposium E – Fundamentals of Novel Oxide/Semiconductor Interfaces , 2003 , E3.12
Copyright
Copyright © Materials Research Society 2004

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References

REFERENCES

1. Ma, Y. and Lucovsky, G., J. Vac. Sci. Technol. B 12, 2504 (1994).Google Scholar
2. Yeh, J. I. and Lee, S. C., J. Appl. Phys. 79, 656 (1996).Google Scholar
3. Chau, T. T., Mejia, S. R. and Kao, K. C., J. Vac. Sci. Technol. B 10, 2170 (1992).Google Scholar
4. Dueñas, S., Peláez, R., Castán, H., Pinacho, R., Quintanilla, L., Barbolla, J., Mártil, I. and González-Díaz, G., Appl. Phys. Lett. 71, 826 (1997)Google Scholar
5. Castán, H., Dueñas, S., Barbolla, J., Redondo, E., Blanco, N., Mártil, I. and González-Díaz, G., Microelectron. Reliab. 40, 845 (2000).Google Scholar