Hostname: page-component-78c5997874-xbtfd Total loading time: 0 Render date: 2024-11-17T15:17:20.561Z Has data issue: false hasContentIssue false
  • English
  • Français

Computer Simulation of Si and C Atoms on SiC Surfaces

Published online by Cambridge University Press:  21 February 2011

C C Matthai ,
G J Moran  and
I Morrison
C C Matthai
Affiliation:
Department of Physics and Astronomy UWCC, Cardiff CF2 3YB, UK
G J Moran
Affiliation:
Department of Physics and Astronomy UWCC, Cardiff CF2 3YB, UK
I Morrison
Affiliation:
Department of Physics and Astronomy UWCC, Cardiff CF2 3YB, UK
Get access

Abstract

The molecular dynamics method employing an empirical potential energy function to describe the Si-C interaction has been used to determine the minimum energy sites for Si and C adatoms on C-terminated SiC (001) substrates. It is found that whereas a single C adatom lies on the carbon dimer bond, this site only becomes energetically favourable for silicon adatoms when they interact to form a dimer pair.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 339: Symposium D – Diamond, Silicon Carbide and Nitride Wide Bandgap Semiconductors , 1994 , 21
Copyright
Copyright © Materials Research Society 1994

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Ivanov, P A and Chelnokov, V E, Semicond Sci Technol 7 863 (1992)Google Scholar
2. Dayan, M, J Vac Sci Technol A3 361 (1985)Google Scholar
3. Craig, B I, Semicond Sci Technol 8 172 (1993)Google Scholar
4. Mehandru, S P and Anderson, A P, Phys Rev B42 9040 (1992)Google Scholar
5. Ashu, P and Matthai, C C, Appl Surf Sci 48/49 39 (1991)Google Scholar
6. Tersoff, J, Phys Rev B39 5566 (1989)Google Scholar