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Comparison of TiN thin films grown on SiO2 by reactive dc magnetron sputtering and high power impulse magnetron sputtering

Published online by Cambridge University Press:  10 August 2011

F. Magnus ,
A. S. Ingason ,
O. B. Sveinsson ,
S. Olafsson  and
J. T. Gudmundsson
F. Magnus
Affiliation:
Science Institute, University of Iceland, Dunhaga 3, IS-107, Reykjavik, Iceland
A. S. Ingason
Affiliation:
Science Institute, University of Iceland, Dunhaga 3, IS-107, Reykjavik, Iceland Thin Film Physics, Department of Physics (IFM), Linköping University, Linköping SE-581 83, Sweden
O. B. Sveinsson
Affiliation:
Science Institute, University of Iceland, Dunhaga 3, IS-107, Reykjavik, Iceland
S. Olafsson
Affiliation:
Science Institute, University of Iceland, Dunhaga 3, IS-107, Reykjavik, Iceland
J. T. Gudmundsson
Affiliation:
Science Institute, University of Iceland, Dunhaga 3, IS-107, Reykjavik, Iceland UM-SJTU Joint Institute, Shanghai Jiao Tong University, 800 Dong Chuan Road, Shanghai, 200240, China
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Abstract

Thin TiN films were grown on SiO2 by a reactive dc magnetron sputtering (dcMS) and high power impulse magnetron sputtering (HiPIMS) at range of temperatures from 45 to 600oC and the properties compared. The HiPIMS process produces denser films at lower growth temperature than does dcMS and the surface is much smoother for films grown by the HiPIMS process. The grain sizes of both orientations are smaller in HiPIMS grown films than in dcMS grown films. The [200] crystallites have smaller size than the [111] crystallites for all growth temperatures. For the dcMS process the grain size increases with increased growth temperature for both the [111] and [200] crystallites. For the HiPIMS process the [200] grain size increases monotonically with increased growth temperature, whereas the size of the [111] oriented grains decreases to a minimum for growth temperature of 400 oC after which it starts to increase with growth temperature.

Keywords

sputteringthin filmx-ray diffraction (XRD)
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1335: Symposium O – Materials, Processes, and Reliability for Advanced Interconnects for Micro- and Nanoelectronics , 2011 , mrss11-1335-o07-07
Copyright
Copyright © Materials Research Society 2011

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References

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