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A Comparison of In-Situ Vapor/Gas Phase Cleaning with Conventional RCA based Wet Cleaning

Published online by Cambridge University Press:  22 February 2011

John M. Grant
John M. Grant*
Affiliation:
Sharp Microelectronics Technology, Inc., 5700 NW Pacific Rim Boulevard, Camas, WA 98607
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Abstract

A comparison study of the effectiveness of in-situ vapor/gas phase cleaning versus conventional wet RCA based cleaning has been performed. The effectiveness of the cleans were compared using Surface Photo-Voltage (SPV) measurements of the quality of a 70Å gate dielectric. Dielectrics grown in oxygen by Rapid Thermal Oxidation (RTO) were measured using SPV. The vapor/gas phase cleaning processes studied have three steps corresponding to the baths in a conventional RCA-based clean. A clean using O2 was used to clean the organic contaminants normally cleaned in the SC-1 bath, a C12 based step corresponded to the SC-2 solution, and an HF/alcohol etch was used to remove the oxide normally etched using buffered HF. It was seen that temperature control of the cleaning chamber walls is necessary to insure reproducible processes and reasonable pump down times. Measurements by SPV indicate that dielectrics grown after vapor-gas phase cleaning have lower interface trap densities than oxides grown after an RCA-based clean.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 342: Symposium G – Rapid Thermal and Integrated Processing III , 1994 , 313
Copyright
Copyright © Materials Research Society 1994

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