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Comparison of Growth and Microstructure of Copper Films Deposited From Different Cu(Ii) Precursors

Published online by Cambridge University Press:  25 February 2011

J. Goswami ,
S.A. Shivashankar ,
Lakshmi Raghunathan ,
Anjana Devi  and
K.V. Ramanathan
J. Goswami
Affiliation:
Materials Research Centre, Indian Institute of Science, BANGALORE 560 012, INDIA
S.A. Shivashankar
Affiliation:
Materials Research Centre, Indian Institute of Science, BANGALORE 560 012, INDIA
Lakshmi Raghunathan
Affiliation:
Materials Research Centre, Indian Institute of Science, BANGALORE 560 012, INDIA
Anjana Devi
Affiliation:
Materials Research Centre, Indian Institute of Science, BANGALORE 560 012, INDIA
K.V. Ramanathan
Affiliation:
Materials Research Centre, Indian Institute of Science, BANGALORE 560 012, INDIA
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Abstract

High quality copper thin films have been obtained by low pressure thermally-activated chemical vapour deposition from two different Cu(II) metalorganic precursors, (a) bis(dipivaloyl-methanato) Cu (II) or Cu(dpm)2 and (b) bis(t-butylaceto acetato)Cu(II) or Cu(tbaoac)2, the latter synthesised with a view to reducing the deposition temperature. A comparative study of the volatility and thermal stability of the two precursors, as well as of the growth and microstructure of copper films from these two precursors, is presented.While the threshold deposition temperature is significantly lower for Cu(tbaoac)2 compared to Cu(dpm)2, the growth rate is considerably higher with Cu(dpm)2-Films obtained from Cu(tbaoac)2 are denser and of lower resistivity at a given thickness compared to those from Cu(dpm)2, and are also smoother, exhibiting mirror-like reflectivity.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 337: Symposium B – Advanced Metallization for Devices and Circuits—Science, Technology and Manufacturing III , 1994 , 691
Copyright
Copyright © Materials Research Society 1994

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References

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