Hostname: page-component-586b7cd67f-dlnhk Total loading time: 0 Render date: 2024-11-25T19:33:28.809Z Has data issue: false hasContentIssue false
  • English
  • Français

Comparison of Copper CVD Using Cu(FOD)2 and Cu(HFAC)2 Reduction

Published online by Cambridge University Press:  10 February 2011

J. S. Boey ,
G. L. Griffin ,
A. W. Maverick  and
H. Fan
J. S. Boey
Affiliation:
Department of Chemical Engineering, Louisiana State University, Baton Rouge,LA 70803
G. L. Griffin
Affiliation:
Department of Chemical Engineering, Louisiana State University, Baton Rouge,LA 70803
A. W. Maverick
Affiliation:
Department of Chemistry, Louisiana State University, Baton Rouge, LA 70803
H. Fan
Affiliation:
Department of Chemistry, Louisiana State University, Baton Rouge, LA 70803
Get access

Abstract

We have measured the growth rate and film properties for the chemical vapor deposition of copper thin films using H2 reduction of Cu(fod)2 [H(fod) = 6,6,7,7,8,8,8-heptafluoro-2,2- dimethyl-3,5-octanedione]. The results are directly compared to deposition using Cu(hfac)2 [H(hfac) = 1,1,1,5,5,5-hexafluoro-2,4-pentanedione]. Higher growth rates are obtained using Cu(fod)2, in part because of differences in reaction order between the two compounds. However, both compounds exhibit significant cluster formation during film nucleation, which leads to residual porosity and film resistivities above 2 µΩ-cm.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 564: Symposium N – Advanced Interconnects and Contacts , 1999 , 251
Copyright
Copyright © Materials Research Society 1999

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. Jackson, R. L., Broadbent, E., Cacouris, T., Harrus, A., Biberger, M., Patton, E., and Walsh, T., Solid State Technol. 41 (3), 49 (1998).Google Scholar
2. Awaya, N. and Arita, Y., Japan. J. Appl. Phys. Pt. 1, 32, 3915 (1993).10.1143/JJAP.32.3915Google Scholar
3. Borgharkar, N. S. and Griffin, G. L., J. Electrochem. Soc. 145, 347 (1998).Google Scholar
4. Kim, D.-H., Wentorf, R. H. Jr.,, and Gill, W., J. Electrochem. Soc. 140, 3267 (1993).10.1149/1.2221021Google Scholar