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Comparison of Conductance and Capacitance techniques for Measurement of Interface States in Thin Oxides
Published online by Cambridge University Press: 21 March 2011
Abstract
Current trends in integrated circuit processing project gate insulators with oxide equivalent thicknesses of 1.5 to 1.0 nm. Gate oxides in this thickness range have oxide capacitances of 1 to 5 μF/cm2. When oxide capacitances are this large, traditional high-frequency capacitance-voltage techniques for measuring interface states can be inaccurate. We show that a combination of high and low frequency capacitance-voltage data, along with frequency dependent conductance methods, produce more accurate results.
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- Copyright © Materials Research Society 2001
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