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Compaction and Cold Crucible Induction Melting of Fine Poly Silicon Powders for Economical Production of Polycrystalline Silicon Ingot

Published online by Cambridge University Press:  01 February 2011

Daesuk Kim ,
Jesik Shin ,
Byungmoon Moon  and
Kiyoung Kim
Daesuk Kim
Affiliation:
[email protected], Korea University of Technology and Education, material engineering, Byung-cheon, Cheon-an, 330-708, Korea, Republic of
Jesik Shin
Affiliation:
[email protected], Korea Institute of Industrial Technology, Songdodong7-47, In-cheon, 406-800, Korea, Republic of
Byungmoon Moon
Affiliation:
[email protected], Korea Institute of Industrial Technology, Songdodong7-47, In-cheon, 406-800, Korea, Republic of
Kiyoung Kim
Affiliation:
[email protected], Korea University of Technology and Education, Material engineering, Byung-cheon, Cheon-an, 330-708, Korea, Republic of
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Abstract

The consolidation and casting processes of fine silicon powders, by-product of high purity silicon rods making process in the current method, were systematically investigated for use as economical solar-grade feedstock. Morphology, size, and contamination type of the fine silicon powders were inspected by combined analysis of SEM, particle size analyzer, and FT-IR. Silicon powder compacts were tried to fabricate by a consolidation process without a binding agent and then their density ratio and strength were evaluated. Finally, the electrical resistivity of the specimens prepared by an electromagnetic casting method was examined for purity assessment.

Keywords

Sipowder processingphotovoltaic
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1041: Symposium R – Life-Cycle Analysis for New Energy Conversion and Storage Systems , 2007 , 1041-R03-11
Copyright
Copyright © Materials Research Society 2008

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References

1. Schmela, M., Photon International March, 66 (2005).Google Scholar
2. Müller, A., Ghosh, M. and Sonnenschein, R., Woditsch, P., Mat. Sci. & Eng B 134, 257 (2006).Google Scholar
3. Shin, J. S., Kim, H. S., Lee, S. M. and Moon, B. M., Materials Science Forum 475–479, 2671 (2005).Google Scholar
4. Palermo, V. and Jones, D., Materials Science in Semiconductor Processing 4, 437 (2001).Google Scholar
5. Barraclough, K. G., Loni, A., Caffull, E. and Canham, L. T., Materials Letter 61, 485 (2007).Google Scholar
6. Lampert, I., Fuzstetter, H. and Jacob, H., J. Electrochem. Soc. 133, 1472 (1986).Google Scholar