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Cleaning Procedures for UHV Cluster-tool MOS Fabrication

Published online by Cambridge University Press:  25 February 2011

C J Sofield ,
M P Murrell ,
S Sugden ,
M Heyns ,
S Verhaverbeke ,
M E Welland ,
B Golan  and
J Barnes
C J Sofield
Affiliation:
AEA Industrial Technology, Harwell Laboratory, Didcot, Oxon., UK
M P Murrell
Affiliation:
AEA Industrial Technology, Harwell Laboratory, Didcot, Oxon., UK
S Sugden
Affiliation:
AEA Industrial Technology, Harwell Laboratory, Didcot, Oxon., UK
M Heyns
Affiliation:
IMEC vzw, Leuven, Belgium
S Verhaverbeke
Affiliation:
IMEC vzw, Leuven, Belgium
M E Welland
Affiliation:
Dept. of Engineering, Cambridge University, Cambridge, UK
B Golan
Affiliation:
Dept. of Engineering, Cambridge University, Cambridge, UK
J Barnes
Affiliation:
Dept. of Engineering, Cambridge University, Cambridge, UK
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Abstract

We have investigated the effect on a silicon surface of both wet chemical and cluster-tool UV/ozone cleaning, prior to UHV processing to fabricate MOS test structures. The physical and chemical condition of the Si surface has been examined by Scanning Tunnelling and Atomic Force Microscopy (STM, AFM) and Medium Energy Ion Scattering (MEIS). After MOS fabrication some of the structures were examined by Cross-sectional Transmission Electron Microscopy (TEM). The electrical performance of the MOS test sets were characterized by breakdown voltage measurements.

We have found correlations between the electrical performance of the MOS devices, the structure of the Si surface prior to oxidation, and the details of the UHV fabrication technique. In particular any MOS device fabricated on a Si surface thermally cleaned in UHV prior to oxidation has a poor breakdown strength. We have found that this is the result of the formation of silicon carbide on the Si surface at high temperature and the subsequent local disruption of the oxidation step of MOS fabrication by the SiC. A UHV cleaning procedure has been developed to avoid this C contamination problem.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 259: Symposium B – Chemical Surface Preparation, Passivation and Cleaning for Semiconductor Growth and Processing , 1992 , 105
Copyright
Copyright © Materials Research Society 1992

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References

REFERENCES

1 Stoneham, A M, in Proceedings of 'Silicon Ultra Clean Processing Workshop', Oxford UK, Sept. 1991, Springer Verlag in press.Google Scholar
2 Fair, R B, and Ruggles, G A, Solid State Technology, 35(5), 107, 1990.Google Scholar
3 Offenberg, M, Liehr, M, and Rubloff, G W, J. Vac. Sci. Technol., A9(3), 1058, 1991.Google Scholar
4 Ohmi, T, Kotani, K, Teramoto, A, and Miyashita, M, IEEE, Elec. Dev. Lett. 12(12), 652, 1991.Google Scholar
5 Offenberg, M, Liehr, M, Rubloff, G W, and Holloway, K, Appl. Phys. Lett. 57(12), 1254, 1990.Google Scholar
6 Sofield, C J, Murrell, M P, Sugden, S, in Proceedings of ‘Silicon Ultra Clean Processing Workshop’, Oxford UK, Sept. 1991, Springer Verlag in press.Google Scholar
7 Kern, W and Puotinen, D A, RCA Review, 187, 1970.Google Scholar
8 Ishizaka, A, and Shiraki, Y, J. Elec. Chem. Soc., 133, 666, 1986.CrossRefGoogle Scholar
9 Vig, J R and LeBus, J W, IEEE Trans. Parts, Hybrids and Packag. PHP–12, 365, 1976.Google Scholar
10 Kim, M J, and Carpenter, R W, J. Mater. Res. 5(2), 347, 1990.Google Scholar
11 Verhaverbecke, S, Mertens, P W, Meuris, M, and Heyns, M M, this Proceedings.Google Scholar
12 Murrell, M P, Sofield, C J, and Sugden, S, Phil. Mag. B63(6), 1277, 1991.Google Scholar
13 Ross, F M and Gibbson, J M, Phys. Rev. Lett. 68(11), 1782, 1992.Google Scholar