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Chemical-Mechanical Polishing of Tungsten with Hologen-Based Slurries

Published online by Cambridge University Press:  25 February 2011

K. Yang ,
R. J. Gutmann ,
S. P. Murarka ,
E. Stonebraker  and
H. Atkins
K. Yang
Affiliation:
Center for Integrated Electronics, Rensselaer Polytechnic Institute, Troy, NY 12180
R. J. Gutmann
Affiliation:
Center for Integrated Electronics, Rensselaer Polytechnic Institute, Troy, NY 12180
S. P. Murarka
Affiliation:
Center for Integrated Electronics, Rensselaer Polytechnic Institute, Troy, NY 12180
E. Stonebraker
Affiliation:
Advanced Device Center, Raytheon Company, Andover, MA 01810
H. Atkins
Affiliation:
Advanced Device Center, Raytheon Company, Andover, MA 01810
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Abstract

Halogen-based slurries have been investigated for chemical-mechanical polishing of tungsten. Among these slurries, Bromine-methanol-water slurry gives the best results. Depending on the polishing parameters and slurry concentration, polishing rate of the slurry for W varies from 100 nm/min to 300 nm/min, while the chemical etch rate of the slurry for W and SiO2 is near zero. The W and SiO2 films after polishing with the slurry show very smooth surfaces (featureless under a high quality optical microscope). The selectivity of larger than 15 has been achieved between W and PECVD TEOS oxide. Tungsten stud formation through CMP with this slurry has been demonstrated with no significant dishing in the metal.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 337: Symposium B – Advanced Metallization for Devices and Circuits—Science, Technology and Manufacturing III , 1994 , 145
Copyright
Copyright © Materials Research Society 1994

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References

REFERENCES

1 Kaufman, KB., Thompson, D. B., Broadie, R. E., Jaso, M. A., Guthrie, W. L., Pearson, D. J., and Small, M. B., J. Electrochemical Soc, 138, 3461 (1991).CrossRefGoogle Scholar
2 Yu, C., Laulusa, A., Grief, M., and Doan, T. T., Proceedings of Ninth International VLSI Multilevel Interconnect Conference, p. 165 (1992).Google Scholar
3 Guthrie, W. L., Desai, M., Colgan, E. G., and Singh, R. P., Advanced Metallization for ULSI Applications (Proceedings of MRS conference), Edited by Rana, V. S., Josi, R. V., and Ohdoaru, I., p. 527 (1992).Google Scholar
4 Li, K. C. and Wang, C. Y., Tungsten, Reihold Publishing, New York (1955).Google Scholar
5 Rieck, G. D., Tungsten and Its Compounds, Oxford, Pergamon (1967)Google Scholar
6 Agte, C., and Vacek, J., Wolfram und Molydban, Akademie-Verlag, Berlin (1959).Google Scholar
7 Gutmann, V., Halogen Chemistry, Vol. 3, p227, Academic Press. London (1967).Google Scholar
8 Edited by Weast, R. C., et al. , CRC Handbook of Chemistry and Physics, CRC Press, Boca Raton, Florida (1992).Google Scholar
9 Iller, R. K., The Chemistry of Silica, Wiley New York (1979).Google Scholar
10 Tomozawa, M., Yang, K., Li, H., and Murarka, S. P., same proceedings.Google Scholar